2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. www.onsemi.com Features 15 AMPERE High DC Current Gain COMPLEMENTARY SILICON High Current Gain Bandwidth Product POWER TRANSISTORS TO220 Compact Package 6080 VOLTS, 75 WATTS These Devices are PbFree and are RoHS Compliant* PNP NPN MAXIMUM RATINGS (Note 1) COLLECTOR 2, 4 COLLECTOR 2, 4 Rating Symbol Value Unit CollectorEmitter Voltage V Vdc CEO 1 1 2N6487, 2N6490 60 BASE BASE 2N6488, 2N6491 80 CollectorBase Voltage V Vdc CB EMITTER 3 EMITTER 3 2N6487, 2N6490 70 2N6488, 2N6491 90 4 EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 15 Adc C TO220 Base Current I 5.0 Adc B CASE 221A STYLE 1 Total Power Dissipation P D T = 25 C 75 W C Derate above 25 C 0.6 W/C 1 2 3 Total Power Dissipation P D T = 25 C 1.8 W A Derate above 25 C 0.014 W/C MARKING DIAGRAM Operating and Storage Junction T , T 65 to +150 C J stg Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2N64xxG AYWW THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R 1.67 C/W JC Thermal Resistance, JunctiontoAmbient R 70 C/W JA 2N64xx = Specific Device Code xx = See Table on Page 5 G = PbFree Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION *For additional information on our PbFree strategy and soldering details, please See detailed ordering, marking, and shipping information in download the ON Semiconductor Soldering and Mounting Techniques the package dimensions section on page 5 of this data sheet. Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 16 2N6487/D2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) (I = 200 mAdc, I = 0) C B 2N6487, 2N6490 60 2N6488, 2N6491 80 CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEX (I = 200 mAdc, V = 1.5 Vdc) C BE 2N6487, 2N6490 70 2N6488, 2N6491 90 Collector Cutoff Current I mAdc CEO (V = 30 Vdc, I = 0) CE B 2N6487, 2N6490 1.0 (V = 40 Vdc, I = 0) CE B 2N6488, 2N6491 1.0 Collector Cutoff Current I Adc CEX (V = 65 Vdc, V = 1.5 Vdc) CE EB(off) 2N6487, 2N6490 500 (V = 85 Vdc, V = 1.5 Vdc) CE EB(off) 2N6488, 2N6491 500 (V = 60 Vdc, V = 1.5 Vdc, T = 150 C) CE EB(off) C 2N6487, 2N6490 5.0 (V = 80 Vdc, V = 1.5 Vdc, T = 150 C) CE EB(off) C 5.0 2N6488, 2N6491 Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 1.0 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 5.0 Adc, V = 4.0 Vdc) 20 150 C CE (I = 15 Adc, V = 4.0 Vdc) 5.0 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 5.0 Adc, I = 0.5 Adc) 1.3 C B (I = 15 Adc, I = 5.0 Adc) 3.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 5.0 Adc, V = 4.0 Vdc) 1.3 C CE (I = 15 Adc, V = 4.0 Vdc) 3.5 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) f MHz T (I = 1.0 Adc, V = 4.0 Vdc, f = 1.0 MHz) 5.0 C CE test SmallSignal Current Gain h fe (I = 1.0 Adc, V = 4.0 Vdc, f = 1.0 kHz) 25 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. f = h f T fe test