Ordering number:ENN2436C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1537/2SC3952 High-Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit:mm amplifier. 2042B 2SA1537/2SC3952 8.0 Features 4.0 3.3 1.0 1.0 High f : f =700MHz. T T High breakdown voltage : V =70Vmin. CEO 3.0 Small reverse transfer capacitance and excellent high-frequency characteristic : 1.6 0.8 C =3.1pF/NPN, 4.8pF/PNP. re Complementary PNP and NPN types. 0.8 Adoption of FBET process. 0.7 0.75 Micaless type. 1 23 1 : Emitter 2 : Collector 2.4 ( ) : 2SA1537 4.8 3 : Base SANYO : TO-126ML Specifications Absolute Maximum Ratings at Ta = 25C Plarameter Ssymbo Csondition Rtating Uni CVollector-to-Base Voltage (V)80 CBO CVollector-to-Emitter Voltage (V)70 CEO EVmitter-to-Base Voltage (V)3 EBO CIollector Current (A)500 m C PIeak Collector Current (A)1000 m CP 1W.3 CPollector Dissipation C Tc=25C 1W0 Jjunction Temperature T 150 C Sgtorage Temperature Tst 55 to +150 C Electrical Characteristics at Ta = 25C Ratings Plarameter Ssymbo Condition Unit mpintxy ma CIollector Cutoff Current V =()60V, I=10 (A)0. CBO CB E EImitter Cutoff Current V =()2V, I=00 (A)1. EBO EB C h 1V =()10V, I=*()50mA 4*0 320 FE CE C DC Current Gain h 2V =()10V, I=0()300mA 6 FE CE C Gfain-Bandwidth Product V =()10V, I=0()100mA 7z0 MH T CE C * h 1 : The 2SA1537/2SC3952 are classified by 50mA h as follows : Continued on next page. FE FE RCank D E F h 400 to 80600 to 121000 to 20 160 to 32 FE Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53002RM (KT)/72098HA (KT)/O189MO/2247TA, TS No.2436-1/4 1.5 1.7 1.4 3.0 7.5 15.5 11.00.4mA 0.2mA 2SA1537/2SC3952 Continued from preceding page. Ratings Plarameter Ssymbo Condition Unit mpintxy ma 3F.6 p OCutput Capacitance V =()30V, f=1MHz ob CB (F5.4) p 3F.1 p RCeverse Transfer Capacitance V =()30V, f=1MHz re CB (F4.8) p CVollector-to-Emitter Saturation Voltage I =()70mA, I=0()7mA (V)1. CE(sat) C B EVmitter-to-Base Saturation Voltage I =()70mA, I=0()7mA (V)1. BE(sat) C B I -- V I -- V C CE C CE 200 --200 2SA1537 2SC3952 --160 160 --120 120 --80 80 --40 40 I =0 I =0 B B 0 0 0 --4 --8 --12 --16 --20 0 48 12 16 20 Collector-to-Emitter Voltage, V V Collector-to-Emitter Voltage, V V CE ITR03891 CE ITR03892 I -- V I -- V C BE C BE --600 600 2SA1537 2SC3952 V =--10V V =10V CE CE --500 500 --400 400 --300 300 --200 200 --100 100 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4010.2 0.4 0.6 0.8 1.0 1.2.4 Base-to-Emitter Voltage, V V Base-to-Emitter Voltage, V V BE ITR03893 BE ITR03894 h -- I h -- I FE C FE C 3 3 2SA1537 2SC3952 2 2 V =--10V V =10V CE CE 100 100 7 7 5 5 3 3 2 2 10 10 7 7 5 5 57 23 572357 57 23 572357 --1000 1000 --10 --100 10 100 Collector Current, I mA Collector Current, I mA ITR03896 ITR03895 C C No.2436-2/4 --0.2mA 0.6mA --0.4mA 0.8mA 1.6mA --0.6mA 1.2mA --0.8mA 1.0mA 1.4mA 1.8mA --1.2mA -- 1.0mA --1.4mA --1.6mA --1.8mA Collector Current, I mA Collector Current, I mA C C DC Current Gain, h FE DC Current Gain, h Collector Current, I mA FE C Collector Current, I mA C