X-On Electronics has gained recognition as a prominent supplier of 2SA2039-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2039-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2039-TL-E ON Semiconductor

2SA2039-TL-E electronic component of ON Semiconductor
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See Product Specifications
Part No.2SA2039-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 5 A 360MHz 800 mW Surface Mount TP-FA
Datasheet: 2SA2039-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.902 ea
Line Total: USD 0.9 
Availability - 60551
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 2SA2039-TL-E More Buying Options & Price Grid(s)

Availability Price Quantity
9
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 2.7432
10 : USD 2.3854
30 : USD 2.1619
100 : USD 1.9344
700 : USD 1.8295
1400 : USD 1.7849

60551
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.902
10 : USD 0.7315
100 : USD 0.5379
700 : USD 0.418

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA2039-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2039-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Ordering number : EN6912D 2SA2039/2SC5706 Bipolar Transistor 2SA2039 / 2SC5706 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I (--)1.2 A B 0.8 W Collector Dissipation P C Tc=25C15W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)500mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)500mA (360)400 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (24)15 pF CB V (sat)1 I =(--)1A, I =(--)50mA (--115)90 (--195)135 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =(--)2A, I =(--)100mA (--255)160 (--430)240 mV CE C B Base-to-Emitter Saturation Voltage V (sat) V =(--)2V, I =(--)100mA (--)0.89 (--)1.2 V BE CE B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--50)100 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)100 A, R =0 (--50)100 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-On Time t (30)35 ns on Storage Time t See speci ed Test Circuit. (230)300 ns stg Fall Time t (15)20 ns f Switching Time Test Circuit I B1 PW=20s D.C.1% I B2 OUTPUT INPUT V 10 R R B 25 + + 50 100F 470F V = --5V V =25V BE CC I =10I = --10I =1A C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo 2SA2039-E TP 500pcs./bag Pb Free 2SC5706-E TP 500pcs./bag 2SC5706-H TP 500pcs./bag Pb Free & Halogen Free 2SA2039-TL-E TP-FA 700pcs./reel Pb Free 2SC5706-TL-E TP-FA 700pcs./reel 2SC5706-TL-H TP-FA 700pcs./reel Pb Free & Halogen Free No.6912-2/10

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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