2SA2153 Bipolar Transistor 50V, 2A, Low VCE(sat), PNP Single www.onsemi.com Features Adoption of MBIT Process Low Saturation Voltage Large Current Capacity and Wide ASO ELECTRICAL CONNECTION 2 Typical Applications Voltage Regulators 1:Base 1 2 : Collector Relay Drivers 3 : Emitter Lamp Drivers Electrical Equipment 3 SPECIFICATIONS MARKING ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) Parameter SymbolValue Unit Collector to Base Voltage V 50 V CBO Collector to Emitter Voltage V 50 V CEO 1 2 Emitter to Base Voltage V 6V 3 EBO Collector Current I 2A C SOT-89 / PCP-1 Collector Current (Pulse) I 4A CP 3 1 2 Base Current I 400 mA B (Note 2) 1.3 W Collector Dissipation P C Tc=25C 3.5 W ORDERING INFORMATION See detailed ordering and shipping Junction Temperature Tj 150 C information on page 5 of this data sheet. Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 Note 2 : Surface mounted on ceramic substrate(450mm 0.8mm) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : April 2016 - Rev. 2 2SA2153/D AZ LOT No.2SA2153 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =40V, I=0A 1 A CBO CB E Emitter Cutoff Current I V =4V, I=0A 1 A EBO EB C h1 V =2V, I =100mA 200 560 FE CE C DC Current Gain h2 V =2V,I =1.5A 40 FE CE C Gain-Bandwidth Product f V =10V, I =300mA 420 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 16 pF CB Collector to Emitter Saturation V(sat) I =1A, I =50mA 0.2 0.4 V CE C B Voltage Base to Emitter Saturation Voltage V(sat) I =1A, I =50mA 0.9 1.2 V BE C B Collector to Base Breakdown V I =10 A, I =0A 50 V (BR)CBO C E Voltage Collector to Emitter Breakdown V I =1mA, R = 50 V (BR)CEO C BE Voltage 6 Emitter to Base Breakdown Voltage V I =10 A, I =0A V (BR)EBO E C 35 Turn-On Time t ns on See specified Test 200 Storage Time t ns stg Circuit Fall Time 24 t ns f Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit www.onsemi.com 2