X-On Electronics has gained recognition as a prominent supplier of 2SA2210-EPN-1E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2210-EPN-1E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2210-EPN-1E ON Semiconductor

2SA2210-EPN-1E electronic component of ON Semiconductor
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See Product Specifications
Part No.2SA2210-EPN-1E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BIP PNP 20A 50V
Datasheet: 2SA2210-EPN-1E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.7555 ea
Line Total: USD 2.76

Availability - 569
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
466
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 1.5295
10 : USD 1.2305
100 : USD 0.9901
350 : USD 0.7452
1050 : USD 0.7119
2800 : USD 0.7119
5250 : USD 0.6854

   
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We are delighted to provide the 2SA2210-EPN-1E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2210-EPN-1E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications 2SA2210 Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching Speci cations at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V --50 V CBO Collector-to-Emitter Voltage V --50 V CEO Emitter-to-Base Voltage V --6 V EBO Collector Current I --20 A C Collector Current (Pulse) I --25 A CP Base Current I --3 A B 2W Collector Dissipation P C Tc=25C30W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Package Dimensions Product & Package Information unit : mm (typ) Package : TO-220F-3SG 7529-002 JEITA, JEDEC : SC-67 Minimum Packing Quantity 10.16 4.7 2SA2210-1E : 50 pcs./magazine 3.18 2.54 Marking Electrical Connection 2 A 1 A2210 2.76 LOT No. 3 1.47 MAX DETAIL-A 0.8 (0.84) 12 3 0.5 1 : Base FRAME 2 : Collector EMC 3 : Emitter 2.54 2.54 SANYO : TO-220F-3SG 2SA2210 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = --40V, I =0A --10 A CBO CB E Emitter Cutoff Current I V = --4V, I =0A --10 A EBO EB C DC Current Gain h V = --2V, I = --1A 150 450 FE CE C Gain-Bandwidth Product f V = --10V, I = --1A 140 MHz T CE C Output Capacitance Cob V = --10V, f=1MHz 215 pF CB Collector-to-Emitter Saturation Voltage V (sat) I = --7A, I = --350mA --200 --500 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = --7A, I = --350mA --1.2 V BE C B Collector-to-Base Breakdown Voltage V I = --100 A, I =0A --50 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I = --1mA, R = --50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = --100 A, I =0A --6 V (BR)EBO E C Turn-On Time t 60 ns on Storage Time t See speci ed Test Circuit 270 ns stg Fall Time t 20 ns f Switching Time Test Circuit I B1 PW=20 s D.C.1% I OUTPUT B2 INPUT V R R B R L + + 50 100 F 470 F V =5V V = --20V BE CC I =20I = --20I = --7A C B1 B2 Ordering Information Device Package Shipping memo 2SA2210-1E TO-220F-3SG 50pcs./magazine Pb Free No. A0667-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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