X-On Electronics has gained recognition as a prominent supplier of 2SB1201T-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1201T-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1201T-TL-E ON Semiconductor

2SB1201T-TL-E electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.2SB1201T-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BIP PNP 2A 50V
Datasheet: 2SB1201T-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.698 ea
Line Total: USD 0.7

Availability - 1876
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1876
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6118
10 : USD 0.5232
100 : USD 0.3691
700 : USD 0.2967
1400 : USD 0.2265
2100 : USD 0.215
9800 : USD 0.2139
24500 : USD 0.2105
49700 : USD 0.207

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Series
Packaging
Collector-Emitter Voltage
Frequency
Mounting
Operating Temp Range
Pin Count
Number Of Elements
Operating Temperature Classification
Package Type
Collector Current Dc
Collector-Base Voltage
Rad Hardened
Emitter-Base Voltage
Power Dissipation
Category
Brand
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1201T-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1201T-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN2112C 2SB1201/2SD1801 Bipolar Transistor 2SB1201 / 2SD1801 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 0.8 W Collector Dissipation P C Tc=25C15W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)50V, I =0A (--)100 nA CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)100 nA EBO EB C h1V =(--)2V, I =(--)100mA 100* 560* FE CE C DC Current Gain h2V =(--)2V, I =(--)1.5A 40 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)50mA 150 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (22)12 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)1A, I =(--)50mA (--0.3)0.15 (--0.7)0.4 V CE C B Base-to-Emitter Saturation Voltage V (sat) V =(--)1A, I =(--)50mA (--)0.9 (--)1.2 V BE CE C Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)60 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10 A, I =0A (--)6 V (BR)EBO E C Turn-On Time t 60 ns on Storage Time t See speci ed Test Circuit. (450)550 ns stg Fall Time t 30 ns f : The 2SB1201/2SD1801 are classi ed by 100mA h as follows : * FE Rank R S T U h 100 to 200 140 to 280 200 to 400 280 to 560 FE Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C. b 1% I B2 INPUT R B V R R L 25 50 + + 100 F 470 F V = --5V V =25V BE CC I =10I = --10I =500mA, V =25V C B1 B2 CC For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo 2SB1201S-E TP 500pcs./bag 2SB1201T-E TP 500pcs./bag 2SD1801S-E TP 500pcs./bag 2SD1801T-E TP 500pcs./bag Pb Free 2SB1201S-TL-E TP-FA 700pcs./reel 2SB1201T-TL-E TP-FA 700pcs./reel 2SD1801S-TL-E TP-FA 700pcs./reel 2SD1801T-TL-E TP-FA 700pcs./reel No.2112-2/10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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