Ordering number : EN2114C 2SB1205 Bipolar Transistor 2SB1205 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I --0.5 A B 1W Collector Dissipation P C Tc=25C10W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =--20V, I =0A --500 nA CBO CB E Emitter Cutoff Current I V =--4V, I =0A --500 nA EBO EB C h1V =--2V, I =500mA 100* 400* FE CE C DC Current Gain h2V =--2V, I =--4A 60 FE CE C Gain-Bandwidth Product f V =--5V, I =--200mA 320 MHz T CE C Output Capacitance Cob V =--10V, f=1MHz 60 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =--3A, I =--60mA --250 --500 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =--3A, I =--60mA --1.0 --1.3 V BE C B Collector-to-Base Breakdown Voltage V I =--10 A, I =0A --25 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =--1mA, R = --20 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =--10 A, I =0A --5 V (BR)EBO E C Turn-On Time t 40 ns on Storage Time t See speci ed Test Circuit. 200 ns stg Fall Time t 10 ns f * : The 2SB1205 is classi ed by 500mA h as follows : FE Rank R S T h 100 to 200 140 to 280 200 to 400 FE Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R B V R R L 50 + + 100 F 470 F V =5V V = --10V BE CC I =10I = --10I = --2A C B1 B2 Ordering Information Device Package Shipping memo 2SB1205S-E TP 500pcs./bag 2SB1205T-E TP 500pcs./bag Pb Free 2SB1205S-TL-E TP-FA 700pcs./reel 2SB1205T-TL-E TP-FA 700pcs./reel No.2114-2/9