Ordering number : ENA0188B 2SB817C Bipolar Transistor 2SB817C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =--160V, I =0A --0.1 mA CBO CB E Emitter Cutoff Current I V =--4V, I =0A --0.1 mA EBO EB C h1V =--5V, I =--1A 100 200 FE CE C DC Current Gain h2V =--5V, I =--5A 35 FE CE C Gain-Bandwidth Product f V =--5V, I =--1A 10 MHz T CE C Output Capacitance Cob V =--10V, f=1MHz 280 pF CB Base to Emitter Voltage V V =--5V, I =--5A --1.5 V BE CE C Collector to Emitter Saturation Voltage V (sat) I =--5A, I =--0.5A --0.3 --2.0 V CE C B Collector to Base Breakdown Voltage V I =--5mA, I =0A --160 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I =--50mA, R = --140 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I =--5mA, I =0A --6 V (BR)EBO E C Turn-ON Time t 0.45 s on Storage Time t See speci ed Test Circuit. 1.75 s stg Fall Time t 0.25 s f Switching Time Test Circuit I B1 PW=20M s OUTPUT D.C. b 1% I B2 INPUT R V B R R = L 10 7 50 7 ++ 100 M F 470 M F V =5V V = --50V BE CC I = --10I =10I = --5A C B1 B2 Ordering Information Device Package Shipping memo 2SB817C-1E TO-3P-3L 30pcs./tube Pb-Free I -- V I -- V C CE C BE --16 --8 V = --5V CE --14 --7 --12 --6 --10 --5 --8 --4 --6 --3 --4 --2 --40mA --20mA --2 --1 I =0mA B 0 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --0.5 --1.0 --1.5 Collector to Emitter Voltage, V -- V IT03410 Base to Emitter Voltage, V -- V IT03412 CE BE No.A0188-2/4 --100mA --400mA --500mA --200mA --300mA Ta=120C 25C --40C Collector Current, I -- A C Collector Current, I -- A C