Ordering number : EN2510B 2SC4134 Bipolar Transistor 2SC4134 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 0.8 W Collector Dissipation P C Tc=25C10W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =100V, I =0A 100 nA CBO CB E Emitter Cutoff Current I V =4V, I =0A 100 nA EBO EB C DC Current Gain h V =5V, I =100mA 100* 400* FE CE C Gain-Bandwidth Product f V =10V, I =100mA 120 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 8.5 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =400mA, I =40mA 0.1 0.4 V CE C B Base-to-Emitter Saturation Voltage V (sat) I =400mA, I =40mA 0.85 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10 A, I =0A 120 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 100 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 6 V (BR)EBO E C Turn-ON Time t 80 ns on Storage Time t See speci ed Test Circuit. 850 ns stg Fall Time t 50 ns f * : The 2SC4134 is classi ed by 100mA h as follows : FE Rank R S T h 100 to 200 140 to 280 200 to 400 FE Switching Time Test Circuit I B1 I B2 OUTPUT INPUT PW=20 s R B DC 1% R L V R + + 50 100 F 470 F --5V 50V I =10I = --10I =400mA C B1 B2 Ordering Information Device Package Shipping memo 2SC4134S-E TP 500pcs./bag 2SC4134T-E TP 500pcs./bag Pb Free 2SC4134S-TL-E TP-FA 700pcs./reel 2SC4134T-TL-E TP-FA 700pcs./reel No.2510-2/9