2SC4617G, S2SC4617G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC75/SOT-416 package 2SC4617G, S2SC4617G MAXIMUM RATINGS (T = 25C) J Rating Symbol Value Unit Collector-Base Voltage V 50 Vdc (BR)CBO Collector-Emitter Voltage V 50 Vdc (BR)CEO Emitter-Base Voltage V 5.0 Vdc (BR)EBO Collector Current Continuous I 100 mAdc C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation (Note 1) P 125 mW D Junction Temperature T 150 C J Storage Temperature Range T 55 ~ +150 C stg 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (I = 50 Adc, I = 0) V 50 Vdc (BR)CBO C E Collector-Emitter Breakdown Voltage (I = 1.0 mAdc, I = 0) V 50 Vdc C B (BR)CEO V 5.0 Vdc Emitter-Base Breakdown Voltage (I = 50 Adc, I = 0) E E (BR)EBO Collector-Base Cutoff Current (V = 30 Vdc, I = 0) I 0.5 A CB E CBO Emitter-Base Cutoff Current (V = 4.0 Vdc, I = 0) I 0.5 A EB B EBO Collector-Emitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 60 mAdc, I = 5.0 mAdc) 0.4 C B DC Current Gain (Note 2) h FE (V = 6.0 Vdc, I = 1.0 mAdc) 120 560 CE C Transition Frequency (V = 12 Vdc, I = 2.0 mAdc, f = 30 MHz) f 180 MHz CE C T Output Capacitance (V = 12 Vdc, I = 0 Adc, f = 1 MHz) C 2.0 pF CB C OB 2. Pulse Test: Pulse Width 300 s, D.C. 2%.