Ordering number : ENA1062A 2SC5226A RF Transistor 2SC5226A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 10 A EBO EB C DC Current Gain h V =5V, I =20mA 60* 270* FE CE C Gain-Bandwidth Product f V =5V, I =20mA 5 7 GHz T CE C Output Capacitance Cob 0.75 1.2 pF V =10V, f=1MHz CB Reverse Transfer Capacitance Cre 0.5 pF 2 S21e1V =5V, I =20mA, f=1GHz 9 12 dB CE C Forward Transfer Gain 2 S21e2V =2V, I =3mA, f=1GHz 8 dB CE C Noise Figure NF V =5V, I =7mA, f=1GHz 1.0 1.8 dB CE C * : The 2SC5226A is classi ed by 20mA hFE as follows : Rank 3 4 5 h 60 to 120 90 to 180 135 to 270 FE Ordering Information Device Package Shipping memo 2SC5226A-4-TL-E MCP 3,000pcs./reel Pb Free 2SC5226A-5-TL-E MCP 3,000pcs./reel h -- I f -- I FE C T C 3 2 V =5V CE 2 10 100 7 7 5 5 3 3 2 2 1.0 10 7 7 5 5 3 5722 3 5 7 3 5 72 7 23 57223 5 7 1.0 10 100 1.0 10 100 Collector Current, I -- mA ITR07919 Collector Current, I -- mA ITR07920 C C Cob -- V Cre -- V CB CB 3 3 f=1MHz f=1MHz 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1 0.1 7 7 5 5 722 35 7 2 35 7 3722 35 7 2 35 7 3 0.1 1.0 0.1 1.0 10 10 Collector-to-Base Voltage, V -- V ITR07921 Collector-to-Base Voltage, V -- V ITR07922 CB CB No. A1062-2/8 V =5V CE Output Capacitance, Cre -- pF DC Current Gain, h FE Reverse Transfer Capacitance, Cre -- pF Gain-Bandwidth Product, f -- GHz T