Ordering number : ENA1074A 2SC5245A RF Transistor 2SC5245A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 10 A EBO EB C DC Current Gain h V =5V, I =10mA 60* 270* FE CE C f1V =5V, I =10mA 5 8 GHz T CE C Gain-Bandwidth Product f2V =1V, I =1mA 3.5 GHz T CE C Output Capacitance Cob 0.45 0.7 pF V =10V, f=1MHz CB Reverse Transfer Capacitance Cre 0.30 pF 2 S21e1V =5V, I =10mA, f=1.5GHz 8 10 dB CE C Forward Transfer Gain 2 S21e2V =1V, I =1mA, f=1.5GHz 5.5 dB CE C NF1 V =5V, I =5mA, f=1.5GHz 1.4 3.0 dB CE C Noise Figure NF2 V =2V, I =3mA, f=1GHz 0.9 dB CE C : The 2SC5245A is classi ed by 10mA hFE as follows : * Rank 3 4 5 h 60 to 120 90 to 180 135 to 270 FE Ordering Information Device Package Shipping memo 2SC5245A-4-TL-E MCP 3,000pcs./reel Pb Free h -- I f -- I FE C T C 5 2 V =5V CE 3 2 10 100 7 7 5 5 3 3 2 2 10 7 5 1.0 3 5 3 5 3 5 23 57 2 3 5 2722 7 7 0.1 1.0 1.0 10 10 100 Collector Current, I -- mA ITR07984 Collector Current, I -- mA IT14098 C C No. A1074-2/8 V =5V CE V =1V CE DC Current Gain, h FE Gain-Bandwidth Product, f -- GHz T