Ordering number : ENA1080A 2SC5415A RF Transistor 2SC5415A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 10 A EBO EB C h1V =5V, I =30mA 90* 270* FE CE C DC Current Gain h2V =5V, I =70mA 70 FE CE C Gain-Bandwidth Product f V =5V, I =30mA 5 6.7 GHz T CE C Output Capacitance Cob 1.2 1.8 pF V =5V, f=1MHz CB Reverse Transfer Capacitance Cre 0.65 pF 2 Forward Transfer Gain S21e V =5V, I =30mA, f=1GHz 7.5 9 dB CE C Noise Figure NF V =5V, I =7mA, f=1GHz 1.1 2.0 dB CE C * : The 2SC5415A is classi ed by 30mA h as follows : FE Rank E F h 90 to 180 135 to 270 FE Ordering Information Device Package Shipping memo 2SC5415AE-TD-E PCP 1,000pcs./reel Pb Free 2SC5415AF-TD-E PCP 1,000pcs./reel I -- V I -- V C CE C BE 50 100 40 80 30 60 20 40 10 20 0.05mA I =0mA B 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0246 8 10 Collector-to-Emitter Voltage, V -- V IT13392 Base-to-Emitter Voltage, V -- V IT13393 CE BE No. A1080-2/8 0.10mA 0.20mA 0.15mA 0.25mA 0.30mA 0.35mA 2V V =5V CE Collector Current, I -- mA C Collector Current, I -- mA C