Ordering number : ENA1061A 2SC5501A RF Transistor 2SC5501A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 10 A EBO EB C DC Current Gain h V =5V, I =20mA 90* 180* FE CE C Gain-Bandwidth Product f V =5V, I =20mA 5 7 GHz T CE C Output Capacitance Cob 0.75 1.2 pF V =10V, f=1MHz CB Reverse Transfer Capacitance Cre 0.4 pF 2 S21e1V =5V, I =20mA, f=1GHz 10 13 dB CE C Forward Transfer Gain 2 S21e2V =2V, I =3mA, f=1GHz 9 dB CE C Noise Figure NF V =5V, I =7mA, f=1GHz 1.0 1.8 dB CE C * : The 2SC5501A is classi ed by 20mA h as follows : FE Rank 4 h 90 to 180 FE Ordering Information Device Package Shipping memo 2SC5501A-4-TR-E MCP4 3,000pcs./reel Pb Free h -- I f -- I FE C T C 2 3 V =5V V =5V CE CE 2 10 100 7 7 5 5 3 3 2 2 1.0 10 7 7 5 5 35 7 23 5 7 23 5 7 2 7 23 5 7 23 57 2 1.0 10 100 1.0 10 100 Collector Current, I -- mA IT00637 Collector Current, I -- mA IT00638 C C Cob -- V Cre -- V CB CB 3 3 f=1MHz f=1MHz 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1 0.1 7 7 5 5 7 23 5 7 23 57 2 3 7 23 5 7 23 57 2 3 0.1 1.0 10 0.1 1.0 10 Collector-to-Base Voltage, V -- V IT00639 Collector-to-Base Voltage, V -- V IT00640 CB CB No. A1061-2/8 Output Capacitance, Cre -- pF DC Current Gain, h FE Reverse Transfer Capacitance, Cre -- pF Gain-Bandwidth Product, f -- GHz T