2SC5536A-TL-H ON Semiconductor

LOT No. LOT No. Ordering number : ENA1092A 2SC5536A RF Transistor 1V 2SC5536A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 10 A EBO EB C h1V =2V, I =3mA 80 200 FE CE C DC Current Gain h2V =2V, I =50mA 70 FE CE C Gain-Bandwidth Product f V =2V, I =3mA 1.0 1.7 GHz T CE C Output Capacitance Cob 1.1 1.8 pF V =10V, f=1MHz CB Reverse Transfer Capacitance Cre 0.8 pF 2 Forward Transfer Gain S21e 13 16 dB V =2V, I =3mA, f=150MHz CE C Noise Figure NF 1.8 3.0 dB Ordering Information Device Package Shipping memo 2SC5536A-TL-H SSFP 8,000pcs./reel Pb Free and Halogem Free I -- V I -- V C CE C CE 60 20 18 50 16 14 40 12 30 10 8 20 6 4 10 2 I =0A I =0A B B 0 0 0.5 1.0 1.5 2.0 2.5 3.0 246180 0 0 Collector-to-Emitter Voltage, V -- V IT14226 Collector-to-Emitter Voltage, V -- V IT14227 CE CE h -- I f -- I FE C T C 2 1000 7 5 10 7 3 5 2 3 100 2 7 5 1.0 3 7 2 5 10 3 23527 23753 57 7 23 5 7 23 5 7 1.0 10 0.1 1.0 10 100 Collector Current, I -- mA IT14228 Collector Current, I -- mA IT01306 C C No. A1092-2/7 V =2V CE 80A 20A 40A 200A 160A 120A A 40 280A 240A 400A 60A 320A 360A 80A 100A 140A 120A 1V V =2V CE DC Current Gain, h Collector Current, I -- mA FE C Gain-Bandwidth Product, f -- GHz Collector Current, I -- mA T C