X-On Electronics has gained recognition as a prominent supplier of 2SC6082-1E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC6082-1E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC6082-1E ON Semiconductor

2SC6082-1E electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.2SC6082-1E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 50 V 15 A 195MHz 2 W Through Hole TO-220F-3SG
Datasheet: 2SC6082-1E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.334 ea
Line Total: USD 1.33

Availability - 5437
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3989
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 1.311
10 : USD 1.0948
100 : USD 0.8809
500 : USD 0.7682
1000 : USD 0.6659
3000 : USD 0.6532
5000 : USD 0.6486
10000 : USD 0.6325
25000 : USD 0.6291

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SC6082-1E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC6082-1E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : ENA0279B 2SC6082 Bipolar Transistor 2SC6082 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =40V, I =0A 10 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 10 A EBO EB C h1V =2V, I =330mA 200 560 FE CE C DC Current Gain h2V =2V, I =10A 50 FE CE C Gain-Bandwidth Product f V =10V, I =2A 195 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 85 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =7.5A, I =375mA 200 400 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =7.5A, I =375mA 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =100A, I =0A 60 V (BR)CBO C E V I =100A, R =0 60 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =1mA, R = 50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =100A, I =0A 6 V (BR)EBO E C Turn-On Time t 52 ns on Storage Time t See speci ed Test Circuit 560 ns stg Fall Time t 37 ns f Switching Time Test Circuit I B1 PW=20s D.C.1% I B2 OUTPUT INPUT R B V R R L + + 50 100F 470F V = --5V BE V =25V CC I =20I = --20I =5A C B1 B2 Ordering Information Device Package Shipping memo 2SC6082-1E TO-220F-3SG 50pcs./magazine Pb Free No. A0279-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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