Ordering number : ENA0410A 2SC6094 Bipolar Transistor 2SC6094 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I 600 mA B 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3 W Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =50V, I =0A 1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 1 A EBO EB C DC Current Gain h V =2V, I =100mA 300 600 FE CE C Gain-Bandwidth Product f V =10V, I =500mA 390 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 18 pF CB V (sat)1 I =1A, I =50mA 90 135 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =1A, I =100mA 80 120 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =1A, I =100mA 0.84 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 100 V (BR)CBO C E V I =100 A, R =0 100 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =1mA, R = 60 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 6.5 V (BR)EBO E C Turn-ON Time t 35 ns on Storage Time t See speci ed Test Circuit. 680 ns stg Fall Time t 24 ns f Switching Time Test Circuit I B1 PW=20s OUTPUT D.C.1% I B2 INPUT V 10 R R B R L 50 ++ 100F 470F V = --5V V =30V BE CC I =10I = --10I =0.5A C B1 B2 Ordering Information Device Package Shipping memo 2SC6094-TD-E PCP 1,000pcs./reel Pb Free No. A0410-2/7