Ordering number : ENA0411A 2SC6095 Bipolar Transistor 2SC6095 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I 500 mA B 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3 W Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =70V, I =0A 1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 1 A EBO EB C DC Current Gain h V =5V, I =100mA 300 600 FE CE C Gain-Bandwidth Product f V =10V, I =500mA 350 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 14 pF CB V (sat)1 I =1A, I =50mA 100 150 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =1A, I =100mA 90 135 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =1A, I =100mA 0.9 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 120 V (BR)CBO C E V I =100 A, R =0 120 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =1mA, R = 80 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 6.5 V (BR)EBO E C Turn-ON Time t 40 ns on Storage Time t See speci ed Test Circuit. 920 ns stg Fall Time t 32 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT V 10 R R B R L 50 + + 100 F 470 F V = --5V V =40V BE CC I =10I = --10I =0.5A C B1 B2 Ordering Information Device Package Shipping memo 2SC6095-TD-E PCP 1,000pcs./reel Pb Free No. A0411-2/7