Ordering number : ENA0435A 2SC6099 Bipolar Transistor 2SC6099 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 0.8 W Collector Dissipation P C Tc=25C15W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =80V, I =0A 1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 1 A EBO EB C DC Current Gain h V =5V, I =100mA 300 600 FE CE C Gain-Bandwidth Product f V =10V, I =300mA 300 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 13 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =1A, I =100mA 110 165 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =1A, I =100mA 0.9 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10 A, I =0A 120 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =100A, R =0 120 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =1mA, R = 100 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10 A, I =0A 6.5 V (BR)EBO E C Turn-On Time t 40 ns on Storage Time t See speci ed Test Circuit. 1100 ns stg Fall Time t 40 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT V 10 R R B R L 50 + + 100 F 470 F V = --5V V =50V BE CC I =10I = --10I =0.5A C B1 B2 Ordering Information Device Package Shipping memo 2SC6099-E TP 500pcs./bag Pb Free 2SC6099-TL-E TP-FA 700pcs./reel No. A0435-2/9