X-On Electronics has gained recognition as a prominent supplier of 2SD1048-6-TB-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD1048-6-TB-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD1048-6-TB-E ON Semiconductor

2SD1048-6-TB-E electronic component of ON Semiconductor
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Part No.2SD1048-6-TB-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT BIP NPN 0.7A 15V
Datasheet: 2SD1048-6-TB-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.341 ea
Line Total: USD 0.34 
Availability - 7172
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0956
9000 : USD 0.0832
24000 : USD 0.077

1
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 1
Multiples : 1
1 : USD 0.376
10 : USD 0.3365
30 : USD 0.3175
100 : USD 0.2986
500 : USD 0.2863
1000 : USD 0.2674

7172
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.341
10 : USD 0.2266
100 : USD 0.1177
1000 : USD 0.1067
3000 : USD 0.0825
9000 : USD 0.0781
24000 : USD 0.0759

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD1048-6-TB-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD1048-6-TB-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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LOT No. LOT No. LOT No. LOT No. Ordering number : EN694H 2SB815/2SD1048 Bipolar Transistor 2SB815 / 2SD1048 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)15V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C h1V =(--)2V, I =(--)50mA 200* 600* FE CE C DC Current Gain h2V =(--)2V, I =(--)500mA 80 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)50mA 250 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (13)8 pF CB V (sat)1 I =(--)5mA, I =(--)0.5mA (--15)10 (--35)25 mV CE C B Collector to Emitter Saturation Voltage V (sat)2 I =(--)100mA, I =(--)10mA (--60)30 (--120)80 mV CE C B : The 2SB815/2SD1048 are classi ed by 50mA h as follows : * FE Rank 6 7 h 200 to 400 300 to 600 FE Ordering Information Device Package Shipping memo 2SB815-6-TB-E CP 3,000pcs./reel 2SB815-7-TB-E CP 3,000pcs./reel Pb Free 2SD1048-6-TB-E CP 3,000pcs./reel 2SD1048-7-TB-E CP 3,000pcs./reel No.694-2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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