Ordering number : EN930E 2SD1207 Bipolar Transistor 2SD1207 Electrical Characteristics at Ta = 25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =50V, I=0A 0.1 A CBO CB E Emitter Cutoff Current I V =4V, I=0A 0.1 A EBO EB C h1 V =2V, I=100mA 140 400 FE CE C DC Current Gain h2 V =2V, I=1.5A 40 FE CE C Gain-Bandwidth Product f V =10V, I=50mA 150 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 12 pF CB Collector to Emitter Saturation Voltage V(sat) I =1A, I=50mA 0.15 0.4V CE C B Base to Emitter Saturation Voltage V(sat) I =1A, I=50mA 0.9 1.2V BE C B Collector to Base Breakdown Voltage V I =10A, I=0A 60 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I =1mA, R = 50 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I =10A, I=0A 6 V (BR)EBO E C *: The 2SD1207 is graded as follows by h at 100mA : FE T Rank S h 140 to 280 200 to 400 FE Ordering Information Device Package Shipping Memo 500pcs./bag 2SD1207S 2SD1207S-AE 1,000pcs./box MP Pb Eree 2SD1207T 500pcs./bag 2SD1207T-AE 1,000pcs./box No.930-2/5