Ordering number : EN1784C 2SD1618 Bipolar Transistor 2SD1618 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =15V, I =0A 0.1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 0.1 A EBO EB C h1V =2V, I =50mA 140* 560* FE CE C DC Current Gain h2V =2V, I =500mA 60 FE CE C Gain-Bandwidth Product f V =10V, I =50mA 250 MHz T CE C V (sat)1 I =5mA, I =0.5mA 10 25 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =100mA, I =10mA 30 80 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =100mA, I =10mA 0.8 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 20 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 15 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 5 V (BR)EBO E C Output Capacitance C V =10V, f=1MHz 8 pF ob CB * : The 2SD1618 is classi ed by 50mA hFE as follows : Rank S T U h 140 to 280 200 to 400 280 to 560 FE Ordering Information Device Package Shipping memo 2SD1618S-TD-E PCP 1,000pcs./reel Pb Free 2SD1618T-TD-E PCP 1,000pcs./reel No.1784-2/6