Ordering number : EN1719D 2SD1620 Bipolar Transistor 2SD1620 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 500 mW Collector Dissipation P C 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =20V, I =0A 100 nA CBO CB E Emitter Cutoff Current I V =4V, I =0A 100 nA EBO EB C DC Current Gain h V =2V, I =3A 140 210 FE CE C Gain-Bandwidth Product f V =10V, I =50mA 200 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 30 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =3A, I =60mA 0.3 0.4 V CE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 30 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, V =3V 20 V (BR)CEX C BE Collector-to-Emitter Breakdown Voltage V I =1mA, R = 10 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 6 V (BR)EBO E C Ordering Information Device Package Shipping memo 2SD1620-TD-E PCP 1,000pcs./reel Pb Free I -- V I -- V C CE C CE 5 5 4 4 3 3 2 2 1 1 2mA 1mA I =0mA I =0mA B B 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0123465 Collector-to-Emitter Voltage, V -- V ITR09987 Collector-to-Emitter Voltage, V -- V ITR09988 CE CE No.1719-2/6 5mA 2mA 15mA 5mA 10mA 15mA 10mA 25mA 25mA 40mA 60mA 40mA Collector Current, I -- A C Collector Current, I -- A C