C-Series Low Noise, Blue-Sensitive Silicon Photomultipliers DATASHEET Low Noise, Blue-Sensitive Silicon Photomultipliers SensLs C-Series low-light sensors feature an industry-leading low dark-count rate combined with a high PDE that is extended much further into the blue part of the spectrum using a high-volume, P-on-N silicon process. For ultrafast timing applications select C-Series sensors have a fast output that can have a rise time of 300ps and a pulse width of 600ps. The C-Series is available in different sensor sizes (1mm, 3mm and 6mm) and packaged in a variety of formats, including a 4-side tileable surface mount (SMT) package that is compatible with industry standard, lead-free, reflow soldering processes. C-Series sensors are pin-for-pin compatible with the B-Series. The C-Series Silicon Photomultipliers (SiPM) form a range of high gain, single-photon sensitive, UV-to-visible light sensors. They have performance characteristics similar to a conventional PMT, while benefiting from the practical advantages of solid-state technology: low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost. For more information on the SensL products, please refer to the website, www.sensl. com. PERFORMANCE PARAMETERS Sensor 1 Microcell Size Parameter Overvoltage Min. Typ. Max. Units Size 1mm 10m, 20m, 35m, 50m 3 3mm 20m, 35m, 50m Breakdown Voltage (Vbr) 24.2 24.7 V 6mm 35m 1mm 10m, 20m, 35m, 50m Recommended overvoltage 3mm 20m, 35m, 50m 1.0 5.0 V 2 Range (Voltage above Vbr) 6mm 35m 1mm 10m, 20m, 35m, 50m 4 3mm 20m, 35m, 50m Spectral Range 300 950 nm 6mm 35m 1mm 10m, 20m, 35m, 50m 3mm 20m, 35m, 50m Peak Wavelength (lp) 420 nm 6mm 35m 1 All measurements made at 2.5V overvoltage and 21C unless otherwise stated. 2 Please consult the maximum current levels on page 6 when selecting the overvoltage to apply. 3 The breakdown voltage (Vbr) is defined as the value of the voltage intercept of a straight line fit to a plot of I vs V, where I is the current and V is the over - voltage. 4 The range where PDE >1% at Vbr + 5.0V. 1 SensL 2014C-Series Low Noise, Blue-Sensitive Silicon Photomultipliers DATASHEET Sensor Microcell Size Parameter Overvoltage Min. Typ. Max. Units Size 10m 14 % 20m 24 % 1mm Vbr + 2.5V 35m 31 % 50m 35 % 10m 18 % 20m 31 % 1mm Vbr + 5.0V 35m 41 % 50m 47 % 5 PDE at lp 20m 24 % 3mm 35m Vbr + 2.5V 31 % 50m 35 % 20m 31 % 3mm 35m Vbr + 5.0V 41 % 50m 47 % 6mm 35m Vbr + 2.5V 31 % 6mm 35m Vbr + 5.0V 41 % 5 10m 2x10 6 20m 1x10 1mm 6 35m 3x10 6 50m 6x10 Gain Vbr + 2.5V (anode to cathode readout) 6 20m 1x10 6 3mm 35m 3x10 6 50m 6x10 6 6mm 35m 3x10 10m 1 3 nA 20m 5 16 nA 1mm 35m 15 49 nA 50m 32 102 nA 6 Dark Current Vbr + 2.5V 20m 50 142 nA 3mm 35m 154 443 nA 50m 319 914 nA 6mm 35m 618 1750 nA 10m 30 96 kHz 30 96 kHz 20m 1mm 35m 30 96 kHz 50m 30 96 kHz Dark Count Rate Vbr + 2.5V 300 860 kHz 20m 3mm 35m 300 860 kHz 50m 300 860 kHz 6mm 1200 3400 kHz 35m 5 Note that the PDE does not contain contributions from afterpulsing or crosstalk. 6 Dark current derived from dark count data as DC*M*q*(1+CT), where DC is dark count, M is gain, q is the charge of an electron, and CT is cross talk. 2 SensL 2014