Low Noise Transistors BC549B,C NPN Silicon BC550B,C MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit CollectorEmitter Voltage V 30 45 Vdc CEO CollectorBase Voltage V 30 50 Vdc CBO EmitterBase Voltage V 5.0 Vdc EBO Collector Current Continuous I 100 mAdc C 1 Total Device Dissipation T = 25C P 625 mW A D 2 Derate above 25C 5.0 mW/C 3 Total Device Dissipation T = 25C P 1.5 Watt C D CASE 2904, STYLE 17 Derate above 25C 12 mW/C TO92 (TO226AA) Operating and Storage Junction T , T 55 to +150 C J stg Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit COLLECTOR 1 Thermal Resistance, Junction to Ambient R 200 C/W JA Thermal Resistance, Junction to Case R 83.3 C/W JC 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) BC549B,C 30 C B BC550B,C 45 CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) BC549B,C 30 C E BC550B,C 50 EmitterBase Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I CBO (V = 30 V, I = 0) 15 nAdc CB E (V = 30 V, I = 0, T = +125C) 5.0 Adc CB E A Emitter Cutoff Current I 15 nAdc EBO (V = 4.0 Vdc, I = 0) EB C Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: February, 2001 Rev. 1 BC549B/DBC549B,C BC550B,C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Continued) A Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain h FE (I = 10 Adc, V = 5.0 Vdc) BC549B/550B 100 150 C CE BC549C/550C 100 270 (I = 2.0 mAdc, V = 5.0 Vdc) BC549B/550B 200 290 450 C CE BC549C/550C 420 500 800 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.075 0.25 C B (I = 10 mAdc, I = see note 1) 0.3 0.6 C B (I = 100 mAdc, I = 5.0 mAdc, see note 2) 0.25 0.6 C B BaseEmitter Saturation Voltage V 1.1 Vdc BE(sat) (I = 100 mAdc, I = 5.0 mAdc) C B BaseEmitter On Voltage V Vdc BE(on) (I = 10 Adc, V = 5.0 Vdc) 0.52 C CE (I = 100 Adc, V = 5.0 Vdc) 0.55 C CE (I = 2.0 mAdc, V = 5.0 Vdc) 0.55 0.62 0.7 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 250 MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) C CE CollectorBase Capacitance C 2.5 pF cbo (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E SmallSignal Current Gain h fe (I = 2.0 mAdc, V = 5.0 V, f = 1.0 kHz) BC549B/BC550B 240 330 500 C CE BC549C/BC550C 450 600 900 Noise Figure dB (I = 200 Adc, V = 5.0 Vdc, R = 2.0 k, f = 1.0 kHz) NF 0.6 2.5 C CE S 1 (I = 200 Adc, V = 5.0 Vdc, R = 100 k, f = 1.0 kHz) NF 10 C CE S 2 NOTES: 1. I is value for which I = 11 mA at V = 1.0 V. B C CE 2. Pulse test = 300 s Duty cycle = 2%. R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model