BC549C, BC550C Low Noise Transistors NPN Silicon Features BC549C, BC550C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 45 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 50 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO 5.0 (I = 10 Adc, I = 0) E C Collector Cutoff Current I CBO (V = 30 V, I = 0) 15 nAdc CB E (V = 30 V, I = 0, T = +125C) 5.0 Adc CB E A Emitter Cutoff Current I nAdc EBO (V = 4.0 Vdc, I = 0) 15 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 10 Adc, V = 5.0 Vdc) 100 270 C CE (I = 2.0 mAdc, V = 5.0 Vdc) 420 500 800 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.075 0.25 C B (I = 10 mAdc, I = see note 1) 0.3 0.6 C B (I = 100 mAdc, I = 5.0 mAdc, see note 2) 0.25 0.6 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 100 mAdc, I = 5.0 mAdc) 1.1 C B BaseEmitter On Voltage V Vdc BE(on) (I = 10 Adc, V = 5.0 Vdc) 0.52 C CE 0.55 (I = 100 Adc, V = 5.0 Vdc) C CE 0.55 0.62 0.7 (I = 2.0 mAdc, V = 5.0 Vdc) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 250 C CE CollectorBase Capacitance C pF cbo (V = 10 Vdc, I = 0, f = 1.0 MHz) 2.5 CB E SmallSignal Current Gain h fe (I = 2.0 mAdc, V = 5.0 V, f = 1.0 kHz) 450 600 900 C CE Noise Figure dB NF 0.6 2.5 (I = 200 Adc, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz) C CE S 1 NF 10 (I = 200 Adc, V = 5.0 Vdc, R = 100 k , f = 1.0 kHz) C CE S 2 1. I is value for which I = 11 mA at V = 1.0 V. B C CE 2. Pulse test = 300 s Duty cycle = 2%. R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model