DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor TO923 BC638 CASE 135AR Bent Lead 1 2 Features 3 Switching and Amplifier Applications 1. Emitter Complement to BC637 2. Collector These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3. Base Compliant MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted) A Parameter Symbol Value Unit ABC 638 CollectorEmitter Voltage at V 60 V CER YWW R = 1 k BE CollectorEmitter Voltage V 60 V CES CollectorEmitter Voltage V 60 V CEO EmitterBase Voltage V 5 V EBO A = Assembly Code Collector Current I 1 A BC638 = Device Code C YWW = Date Code Peak Collector Current I 1.5 A CP Base Current I 100 mA B Junction Temperature T 150 C J ORDERING INFORMATION See detailed ordering and shipping information on page 2 of Storage Temperature T 65 to 150 C STG this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) (Values are at T = 25C unless otherwise noted) A Parameter Symbol Value Unit Power Dissipation P 1 W D Dissipation Derate Above 25C P 8 mW/C D Thermal Resistance, JunctiontoAmbient R 125 C/W JA 1. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: November, 2021 Rev. 3 BC638/DBC638 ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted) A Symbol Parameter Conditions Min. Typ. Max. Unit BV CollectorEmitter Breakdown Voltage I = 10 mA, I = 0 60 V CEO C B I Collector CutOff Current V = 30 V, I = 0 0.1 A CBO CB E I Emitter CutOff Current V = 5 V, I = 0 10 A EBO EB C h DC Current Gain V = 2 V, I = 5 mA 25 FE1 CE C h V = 2 V, I = 150 mA 40 160 FE2 CE C h V = 2 V, I = 500 mA 25 FE3 CE C V (sat) CollectorEmitter Saturation Voltage I = 500 mA, I = 50 mA 0.5 V CE C B V (on) BaseEmitter On Voltage V = 2 V, I = 500 mA 1 V BE CE C f Current Gain Bandwidth Product V = 5 V, I = 10 mA, f = 50 MHz 100 MHz T CE C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Mark Package Shipping BC638TA BC638 TO923, case 135AR (PbFree) 2,000 Units / Fan Fold www.onsemi.com 2