X-On Electronics has gained recognition as a prominent supplier of BC807-25WT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC807-25WT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC807-25WT1G ON Semiconductor

BC807-25WT1G electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.BC807-25WT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT SS SC70 GP XSTR PNP 45V
Datasheet: BC807-25WT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

468: USD 0.0777 ea
Line Total: USD 36.36

Availability - 973
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ: 468  Multiples: 1
Pack Size: 1
Availability Price Quantity
973
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2525
10 : USD 0.1741
100 : USD 0.0777
1000 : USD 0.0526
3000 : USD 0.035
9000 : USD 0.0303
24000 : USD 0.0257
45000 : USD 0.0235
99000 : USD 0.0212

14646
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2587
10 : USD 0.2583
25 : USD 0.2579
100 : USD 0.2575
250 : USD 0.257
500 : USD 0.2566
1000 : USD 0.2562
3000 : USD 0.2558
6000 : USD 0.2554
15000 : USD 0.2549

1713
Ship by Wed. 31 Jul to Mon. 05 Aug
MOQ : 10
Multiples : 10
10 : USD 0.0587
100 : USD 0.0478
300 : USD 0.0419
3000 : USD 0.0382
6000 : USD 0.0351
9000 : USD 0.0333

1920
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 0.247
10 : USD 0.1742
100 : USD 0.0832
467 : USD 0.0351
1284 : USD 0.0338

14646
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 315
Multiples : 1
315 : USD 0.257
500 : USD 0.2566
1000 : USD 0.2562
3000 : USD 0.2558
6000 : USD 0.2554
15000 : USD 0.2549

973
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 468
Multiples : 1
468 : USD 0.0777
1000 : USD 0.0526
3000 : USD 0.0352
9000 : USD 0.0303
24000 : USD 0.0257
45000 : USD 0.0235
99000 : USD 0.0212

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Qualification
Series
Packaging
Brand
Continuous Collector Current
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the BC807-25WT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC807-25WT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC807-25W, BC807-40W General Purpose Transistors PNP Silicon BC80725W, BC80740W ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 45 V (BR)CEO (I = 10 mA) C CollectorEmitter Breakdown Voltage V 50 V (BR)CES (V = 0, I = 10 A) EB C EmitterBase Breakdown Voltage V 5.0 V (BR)EBO (I = 1.0 A) E Collector Cutoff Current I CBO (V = 20 V) 100 nA CB (V = 20 V, T = 150C) 5.0 A CB J ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC80725, SBC80725 160 400 C CE BC80740, SBC80740 250 600 (I = 500 mA, V = 1.0 V) 40 C CE CollectorEmitter Saturation Voltage V 0.7 V CE(sat) (I = 500 mA, I = 50 mA) C B BaseEmitter On Voltage V 1.2 V BE(on) (I = 500 mA, V = 1.0 V) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping BC80725WT1G 3000 / Tape & Reel SC70 SBC80725T1G* 5B (PbFree) BC80725WT3G 10,000 / Tape & Reel BC80740WT1G 3000 / Tape & Reel SC70 SBC80740WT1G* 5C (PbFree) BC80740WT3G 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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