BC847ATT1, BC847BTT1, BC847CTT1 General Purpose Transistors NPN Silicon BC847ATT1, BC847BTT1, BC847CTT1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 10 mA) BC847 Series 45 C CollectorEmitter Breakdown Voltage V V (BR)CES (I = 10 A, V = 0) BC847 Series 50 C EB CollectorBase Breakdown Voltage V V (BR)CBO (I = 10 A) BC847 Series 50 C EmitterBase Breakdown Voltage V V (BR)EBO (I = 1.0 A) BC847 Series 6.0 E Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) BC847A 90 C CE BC847B 150 BC847C 270 (I = 2.0 mA, V = 5.0 V) BC847A 110 180 220 C CE BC847B 200 290 450 BC847C 420 520 800 CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.25 V C B CE(sat) CollectorEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.6 C B BaseEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) BaseEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B BaseEmitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) BaseEmitter Voltage (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C 4.5 pF CB obo Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) 10 C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.