BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC70/SOT323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1 Qualified and PPAP Capable BASE These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V V CEO 3 SC70/SOT323 BC846 65 CASE 419 BC847 45 1 STYLE 3 BC848 30 2 Collector-Base Voltage V V CBO BC846 80 BC847 50 BC848 30 MARKING DIAGRAM Emitter-Base Voltage V V EBO BC846 6.0 BC847 6.0 BC848 5.0 XX M Collector Current Continuous I 100 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XX = Specific Device Code M = Month Code THERMAL CHARACTERISTICS = PbFree Package Characteristic Symbol Max Unit (Note: Microdot may be in either location) Total Device Dissipation FR5 Board, (Note 1) T = 25C P 200 mW A D Thermal Resistance, ORDERING INFORMATION JunctiontoAmbient 620 C/W R JA See detailed ordering, marking and shipping information in the package dimensions section on page 12 of this data sheet. Junction and Storage Temperature T , T 55 to C J stg +150 1. FR5 = 1.0 x 0.75 x 0.062 in. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2015 Rev. 12 BC846AWT1/DBC846, BC847, BC848 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage BC846 Series V 65 V (BR)CEO (I = 10 mA) BC847 Series 45 C BC848 Series 30 CollectorEmitter Breakdown Voltage BC846 Series V 80 V (BR)CES (I = 10 A, V = 0) BC847 Series 50 C EB BC848 Series 30 CollectorBase Breakdown Voltage BC846 Series V 80 V (BR)CBO (I = 10 A) BC847 Series 50 C BC848 Series 30 EmitterBase Breakdown Voltage BC846 Series V 6.0 V (BR)EBO (I = 1.0 A) BC847 Series 6.0 E BC848 Series 5.0 Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain BC846A, BC847A, BC848A h 90 FE 150 (I = 10 A, V = 5.0 V) BC846B, BC847B, BC848B C CE BC847C, BC848C 270 (I = 2.0 mA, V = 5.0 V) BC846A, BC847A, BC848A 110 180 220 C CE BC846B, BC847B, BC848B 200 290 450 BC847C, BC848C 420 520 800 CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.25 V C B CE(sat) BaseEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.6 C B BaseEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) BaseEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B BaseEmitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) BaseEmitter Voltage (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C 4.5 pF CB obo Noise Figure (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) NF 10 dB C CE S www.onsemi.com 2