BC858CDXV6T1, BC858CDXV6T5 Dual General Purpose Transistor PNP Dual BC858CDXV6T1, BC858CDXV6T5 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 10 mA) 30 C CollectorEmitter Breakdown Voltage V V (BR)CES (I = 10 A, V = 0) 30 C EB CollectorBase Breakdown Voltage V V (BR)CBO (I = 10 A) 30 C EmitterBase Breakdown Voltage V V (BR)EBO (I = 1.0 A) 5.0 E Collector Cutoff Current (V = 30 V) I 15 nA CB CBO 4.0 A Collector Cutoff Current (V = 30 V, T = 150C) CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 270 C CE (I = 2.0 mA, V = 5.0 V) 420 520 800 C CE CollectorEmitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.3 C B (I = 100 mA, I = 5.0 mA) 0.65 C B BaseEmitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 0.5 mA) 0.7 C B (I = 100 mA, I = 5.0 mA) 0.9 C B BaseEmitter On Voltage V V BE(on) (I = 2.0 mA, V = 5.0 V) 0.6 0.75 C CE (I = 10 mA, V = 5.0 V) 0.82 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 4.5 pF ob (V = 10 V, f = 1.0 MHz) CB Noise Figure NF 10 dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , C CE S f = 1.0 kHz, BW = 200 Hz)