BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose www.onsemi.com Transistors Voltage and Current are Negative for PNP Transistors SOT23 Features (TO236) CASE 31808 S and NSV Prefix for Automotive and Other Applications Requiring STYLE 6 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable PNP NPN These Devices are PbFree, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant COLLECTOR 3 3 MAXIMUM RATINGS 1 1 Rating Symbol Value Unit BASE BASE Collector Emitter Voltage V Vdc CEO BCX17, BCX19 45 2 2 BCX18 25 EMITTER EMITTER Collector Base Voltage V Vdc CBO BCX17, BCX19 50 MARKING DIAGRAM BCX18 30 Emitter Base Voltage V 5.0 Vdc EBO Collector Current Continuous I 500 mAdc C XX M THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P 225 mW XX = T1, T2 or U1 D (Note 1), T = 25C M = Date Code* A Derate above 25C 1.8 mW/C = PbFree Package Thermal Resistance, (Note: Microdot may be in either location) JunctiontoAmbient R 556 C/W JA *Date Code orientation and/or overbar may Total Device Dissipation Alumina P D vary depending upon manufacturing location. Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C ORDERING INFORMATION Thermal Resistance, See detailed ordering and shipping information in the package JunctiontoAmbient R 417 C/W dimensions section on page 2 of this data sheet. JA Junction and Storage Temperature T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: November, 2016 Rev. 9 BCX17LT1/DBCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) C B BCX17, BCX19, SBCX19 45 BCX18 25 CollectorEmitter Breakdown Voltage V Vdc (BR)CES (I = 10 Adc, I = 0) C C BCX17, BCX19, SBCX19 50 BCX18 30 Collector Cutoff Current I CBO (V = 20 Vdc, I = 0) 100 nAdc CB E (V = 20 Vdc, I = 0, T = 150C) 5.0 Adc CB E A Emitter Cutoff Current I Adc EBO (V = 5.0 Vdc, I = 0) 10 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 100 mAdc, V = 1.0 Vdc) 100 600 C CE (I = 300 mAdc, V = 1.0 Vdc) 70 C CE (I = 500 mAdc, V = 1.0 Vdc) 40 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.62 C B BaseEmitter On Voltage V Vdc BE(on) (I = 500 mAdc, V = 1.0 Vdc) 1.2 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping BCX17LT1G SOT23 3,000 / Tape & Reel T1 (PbFree) NSVBCX17LT1G* SOT23 3,000 / Tape & Reel T1 (PbFree) BCX18LT1G SOT23 3,000 / Tape & Reel T2 (PbFree) BCX19LT1G SOT23 3,000 / Tape & Reel U1 (PbFree) SBCX19LT1G* SOT23 3,000 / Tape & Reel U1 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable. www.onsemi.com 2