BCX71JLT1G General Purpose Transistor PNP Silicon Features Moisture Sensitivity Level: 1 BCX71JLT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 2.0 mAdc, I = 0) 45 C B Collector Base Breakdown Voltage V Vdc (BR)EBO (I = 1.0 Adc, I = 0) 5.0 E E Collector Cutoff Current I CES (V = 32 Vdc) 20 nAdc CE (V = 32 Vdc, T = 150C) 20 Adc CE A ON CHARACTERISTICS DC Current Gain h FE (I = 10 Adc, V = 5.0 Vdc) 40 C CE (I = 2.0 mAdc, V = 5.0 Vdc) 250 460 C CE (I = 50 mAdc, V = 1.0 Vdc) 100 C CE (I = 2.0 mAdc, V = 5.0 Vdc, f = 1.0 kHz) 250 500 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 0.25 mAdc) 0.25 C B (I = 50 mAdc, I = 1.25 mAdc) 0.55 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 1.0 mAdc, V = 5.0 Vdc) 0.6 0.85 C CE (I = 10 mAdc, V = 5.0 Vdc) 0.68 1.05 C CE Base Emitter On Voltage V Vdc BE(on) (I = 2.0 mAdc, V = 5.0 Vdc) 0.6 0.75 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 6.0 CE C Noise Figure NF dB (I = 0.2 mAdc, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) 6.0 C CE S SWITCHING CHARACTERISTICS TurnOn Time t ns on (I = 10 mAdc, I = 1.0 mAdc) 150 C B1 Turn Off Time t ns off (I = 1.0 mAdc, V = 3.6 Vdc, R1 = R2 = 5.0 k , R = 990 ) 800 B2 BB L TYPICAL NOISE CHARACTERISTICS (V = 5.0 Vdc, T = 25C) CE A 10 1.0 BANDWIDTH = 1.0 Hz 7.0 BANDWIDTH = 1.0 Hz R 0 7.0 S 5.0 R S I = 1.0 mA I = 10 A C 3.0 C 5.0 2.0 300 A 30 A 1.0 3.0 100 A 0.7 100 A 0.5 300 A 1.0 mA 2.0 0.3 30 A 0.2 10 A 1.0 0.1 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 1. Noise Voltage Figure 2. Noise Current