BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features www.onsemi.com Suitable for Transformerless, LineOperated Equipment High Power Dissipation Rating for High Reliability 0.5 AMPERE These Devices are PbFree and are RoHS Compliant* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS 350 VOLTS, 20 WATTS Rating Symbol Value Unit CollectorEmitter Voltage V 350 Vdc CEO COLLECTOR CollectorBase Voltage V 375 Vdc CB 2, 4 EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 0.5 Adc C 3 Collector Current Peak I 1.0 Adc CM BASE Base Current I 0.25 Adc B 1 Total Power Dissipation P D EMITTER T = 25 C 20 W C Derate above 25 C 0.16 mW/ C Operating and Storage Junction T , T 65 to +150 C J stg Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be TO225 assumed, damage may occur and reliability may be affected. CASE 7709 STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 1 2 3 Thermal Resistance, JunctiontoCase R 6.25 C/W JC MARKING DIAGRAM YWW BD159G Y = Year WW = Work Week BD159 = Device Code G = PbFree Package ORDERING INFORMATION Device Package Shipping TO225 500 Units/Box BD159G (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: March, 2017 Rev. 8 BD159/DBD159G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I = 1.0 mAdc, I = 0) BV 350 Vdc C B CEO Collector Cutoff Current (at rated voltage) I 100 Adc CBO Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 100 Adc EB C EBO ON CHARACTERISTICS DC Current Gain (I = 50 mAdc, V = 10 Vdc) h 30 240 C CE FE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 25 1.0 V I /I = 10 0.8 BE C B 20 V V = 10 V BE CE 0.6 15 0.4 V I /I = 10 CE(sat) C B 10 0.2 T = + 25C J I /I = 5.0 C B 5.0 0 0 20 40 60 80 100 120 140 160 10 20 30 50 100 200 300 500 T , CASE TEMPERATURE (C) I , COLLECTOR CURRENT (mA) C C Figure 1. Power Temperature Derating Curve Figure 2. On Voltages 1.0 The Safe Operating Area Curves indicate I V limits C CE 0.7 10 s below which the device will not enter secondary breakdown. 500 s 0.5 Collector load lines for specific circuits must fall within the 1.0 ms T = 150C 0.3 J applicable Safe Area to avoid causing a catastrophic failure. dc 0.2 To insure operation below, the maximum T , J powertemperature derating must be observed for both 0.1 steady state and pulse power conditions. 0.07 0.05 BONDING WIRE LIMITED 0.03 THERMALLY LIMITED T = 25C C 0.02 (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.01 10 20 30 50 100 200 300 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 3. DC Safe Operating Area 300 V = 10 V CE 200 V = 2.0 V CE T = 150C J 100 + 100C 70 50 + 25C 30 20 - 55C 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 I , COLLECTOR CURRENT (mAdc) C Figure 4. Current Gain www.onsemi.com 2 I , COLLECTOR CURRENT (AMPS) P , POWER DISSIPATION (WATTS) h , DC CURRENT GAIN C D FE V, VOLTAGE (VOLTS)