BD180G Plastic Medium-Power Silicon PNP Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. BD180G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit CollectorEmitter Sustaining Voltage (Note 1) V Vdc (BR)CEO (I = 0.1 Adc, I = 0) 80 C B Collector Cutoff Current I mAdc CBO (V = 80 Vdc, I = 0) 1.0 CB E Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 1.0 BE C DC Current Gain h FE (I = 0.15 A, V = 2.0 V) 40 250 C CE (I = 1.0 A, V = 2.0 V) 15 C CE CollectorEmitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 1.0 Adc, I = 0.1 Adc) 0.8 C B BaseEmitter On Voltage (Note 1) V Vdc BE(on) (I = 1.0 Adc, V = 2.0 Vdc) 1.3 C CE CurrentGain Bandwidth Product f MHz T (I = 250 mAdc, V = 10 Vdc, f = 1.0 MHz) 3.0 C CE 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 10 The Safe Operating Area Curves indicate I V limits C CE 100 s 7.0 below which the device will not enter secondary breakdown. 5.0 1.0 ms Collector load lines for specific circuits must fall within the 3.0 applicable Safe Area to avoid causing a catastrophic failure. To 5.0 ms 2.0 insure operation below the maximum T , powertemperature J dc derating must be observed for both steady state and pulse 1.0 T = 150C J power conditions. 0.7 0.5 SECONDARY BREAKDOWN LIMITATION THERMAL LIMITATION 0.3 (BASEEMITTER DISSIPATION IS 0.2 SIGNIFICANT ABOVE I = 20 AMP) C PULSE DUTY CYCLE < 10% BD180 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 1. Active Region Safe Operating Area 1.0 T = 25C J 0.8 I = 0.1 A 0.25 A 0.5 A 1.0 A C 0.6 0.4 0.2 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I , BASE CURRENT (mA) B Figure 2. Collector Saturation Region