X-On Electronics has gained recognition as a prominent supplier of BD679G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. BD679G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

BD679G ON Semiconductor

BD679G electronic component of ON Semiconductor
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See Product Specifications
Part No.BD679G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Darlington Transistors 4A 80V Bipolar Power NPN
Datasheet: BD679G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2000
Multiples : 1
2000 : USD 0.394
2500 : USD 0.3544
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0989
10 : USD 0.9629
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Obsolete
0
MOQ : 500
Multiples : 500
500 : USD 0.2447
1500 : USD 0.2447
2000 : USD 0.2349
5000 : USD 0.2349
7500 : USD 0.2349
N/A

Obsolete
0
MOQ : 1500
Multiples : 1500
1500 : USD 0.339
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.7289
10 : USD 1.458
30 : USD 1.3091
100 : USD 1.1411
500 : USD 1.0114
1000 : USD 0.977
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.6494
10 : USD 0.9685
100 : USD 0.7124
500 : USD 0.5627
1000 : USD 0.4501
2000 : USD 0.4108
N/A

Obsolete
0
MOQ : 3
Multiples : 1
3 : USD 0.7591
10 : USD 0.6778
25 : USD 0.5965
28 : USD 0.488
77 : USD 0.4609
N/A

Obsolete
0
MOQ : 17
Multiples : 1
17 : USD 0.4294
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BD679G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BD679G and other electronic components in the Darlington Transistors category and beyond.

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Image Part-Description
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BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage, (Note 1) BV Vdc CEO (I = 50 mAdc, I = 0) C B BD675G, BD675AG 45 BD677G, BD677AG 60 BD679G, BD679AG 80 BD681G 100 Collector Cutoff Current I Adc CEO (V = Half Rated V , I = 0) 500 CE CEO B Collector Cutoff Current I mAdc CBO (V = Rated BV , I = 0) 0.2 CB CEO E (V = Rated BV , I = 0, T = 100C) 2.0 CB CEO E C Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS DC Currert Gain, (Note 1) h FE (I = 1.5 Adc,V = 3.0 Vdc) C CE BD675G, BD677G, BD679G, BD681G 750 (I = 2.0 Adc, V = 3.0 Vdc) C CE BD675AG, BD677AG, BD679AG 750 CollectorEmitter Saturation Voltage, (Note 1) (I = 1.5 Adc, I = 30 mAdc) V Vdc C B CE(sat) BD677G, BD679G, BD681G 2.5 (I = 2.0 Adc, I = 40 mAdc) C B BD675AG, BD677AG, BD679AG 2.8 BaseEmitter On Voltage, (Note 1) V Vdc BE(on) (I = 1.5 Adc, V = 3.0 Vdc) C CE BD677G, BD679G, BD681G 2.5 (I = 2.0 Adc, V = 3 0 Vdc) C CE BD675AG, BD677AG, BD679AG 2.5 DYNAMIC CHARACTERISTICS Small Signal Current Gain h fe (I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz) 1.0 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 50 5.0 45 40 2.0 35 1.0 30 BONDING WIRE LIMIT 25 THERMALLY LIMIT at T = 25C 0.5 C SECONDARY BREAKDOWN LIMIT 20 15 0.2 BD675, 675A 10 BD677, 677A T = 25C C 0.1 BD679, 679A 5.0 BD681 0 0.05 15 30 45 60 75 90 105 120 135 150 165 1.0 2.0 5.0 10 20 50 100 T , CASE TEMPERATURE (C) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) C CE Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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