X-On Electronics has gained recognition as a prominent supplier of BD681G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. BD681G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

BD681G ON Semiconductor

BD681G electronic component of ON Semiconductor
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See Product Specifications
Part No.BD681G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Darlington Transistors 4A 100V Bipolar Power NPN
Datasheet: BD681G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6984 ea
Line Total: USD 0.7 
Availability - 6
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
679
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 50
Multiples : 50
50 : USD 0.6083
250 : USD 0.5821
1000 : USD 0.5506
2500 : USD 0.5224
5000 : USD 0.5146
7500 : USD 0.5069
10000 : USD 0.4993
15000 : USD 0.4918

2416
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0751
10 : USD 0.8373
100 : USD 0.6014
500 : USD 0.5434

608
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.373
10 : USD 0.9653
100 : USD 0.6322
500 : USD 0.5063

6
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6984
10 : USD 0.5671
30 : USD 0.5015
100 : USD 0.4523
500 : USD 0.413
1000 : USD 0.3932

646
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.232
10 : USD 0.91
28 : USD 0.6104
77 : USD 0.5782
500 : USD 0.5572

608
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 16
Multiples : 1
16 : USD 0.9653
100 : USD 0.6322
500 : USD 0.5063

679
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 150
Multiples : 50
150 : USD 0.7442
250 : USD 0.7123

2425
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 15
Multiples : 1
15 : USD 0.8373
100 : USD 0.6014
500 : USD 0.5434

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BD681G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BD681G and other electronic components in the Darlington Transistors category and beyond.

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BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage, (Note 1) BV Vdc CEO (I = 50 mAdc, I = 0) C B BD675G, BD675AG 45 BD677G, BD677AG 60 BD679G, BD679AG 80 BD681G 100 Collector Cutoff Current I Adc CEO (V = Half Rated V , I = 0) 500 CE CEO B Collector Cutoff Current I mAdc CBO (V = Rated BV , I = 0) 0.2 CB CEO E (V = Rated BV , I = 0, T = 100C) 2.0 CB CEO E C Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS DC Currert Gain, (Note 1) h FE (I = 1.5 Adc,V = 3.0 Vdc) C CE BD675G, BD677G, BD679G, BD681G 750 (I = 2.0 Adc, V = 3.0 Vdc) C CE BD675AG, BD677AG, BD679AG 750 CollectorEmitter Saturation Voltage, (Note 1) (I = 1.5 Adc, I = 30 mAdc) V Vdc C B CE(sat) BD677G, BD679G, BD681G 2.5 (I = 2.0 Adc, I = 40 mAdc) C B BD675AG, BD677AG, BD679AG 2.8 BaseEmitter On Voltage, (Note 1) V Vdc BE(on) (I = 1.5 Adc, V = 3.0 Vdc) C CE BD677G, BD679G, BD681G 2.5 (I = 2.0 Adc, V = 3 0 Vdc) C CE BD675AG, BD677AG, BD679AG 2.5 DYNAMIC CHARACTERISTICS Small Signal Current Gain h fe (I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz) 1.0 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 50 5.0 45 40 2.0 35 1.0 30 BONDING WIRE LIMIT 25 THERMALLY LIMIT at T = 25C 0.5 C SECONDARY BREAKDOWN LIMIT 20 15 0.2 BD675, 675A 10 BD677, 677A T = 25C C 0.1 BD679, 679A 5.0 BD681 0 0.05 15 30 45 60 75 90 105 120 135 150 165 1.0 2.0 5.0 10 20 50 100 T , CASE TEMPERATURE (C) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) C CE Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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