BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. www.onsemi.com Features 10 AMPERE High DC Current Gain POWER TRANSISTORS These Devices are PbFree and are RoHS Compliant* 80 VOLTS 90 WATTS MAXIMUM RATINGS PNP NPN Rating Symbol Value Unit COLLECTOR 2, 4 COLLECTOR 2, 4 CollectorEmitter Voltage V 80 Vdc CEO CollectorBase Voltage V 80 Vdc CBO 1 1 EmitterBase Voltage V 5.0 Vdc EBO BASE BASE Collector Current I 10 Adc C EMITTER 3 EMITTER 3 Base Current I 6.0 Adc B Total Device Dissipation P D 4 T = 25C 90 W C Derate above 25C 0.72 W/C Operating and Storage Junction T , T 55 to +150 C J stg TO220 Temperature Range CASE 221A STYLE 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 2 3 THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R 1.39 C/W JC BD8xxG AY WW BD8xx = Device Code x = 09 or 10 A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping BD809G TO220 50 Units/Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please BD810G TO220 50 Units/Rail download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 8 BD809/DBD809 (NPN), BD810 (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit CollectorEmitter Sustaining Voltage (Note 1) BV Vdc CEO (I = 0.1 Adc, I = 0) 80 C B Collector Cutoff Current I mAdc CBO (V = 80 Vdc, I = 0) CB E 1.0 Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C DC Current Gain h FE (I = 2.0 A, V = 2.0 V) C CE 30 (I = 4.0 A, V = 2.0 V) C CE 15 CollectorEmitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 3.0 Adc, I = 0.3 Adc) 1.1 C B BaseEmitter On Voltage (Note 1) V Vdc BE(on) (I = 4.0 Adc, V = 2.0 Vdc) 1.6 C CE CurrentGain Bandwidth Product f MHz T (I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz) 1.5 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 90 .5 ms 80 1 ms 1 ms 5 ms 10 70 60 3 dc 50 40 1 30 20 0.3 10 0.1 0 1 3 10 30 100 0 25 50 75 100 125 150 175 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) T , CASE TEMPERATURE (C) CE C Figure 1. Active Region DC Safe Operating Area Figure 2. PowerTemperature Derating Curve (see Note on page 3) BD809 (NPN) BD810 (PNP) 500 500 T = 150C J T = 150C 200 200 J 25C 25C 100 100 - 55C - 55C 50 50 20 20 V = 2.0 V CE 10 10 V = 2.0 V CE 5.0 5.0 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 I , COLLECTOR CURRENT (AMP) I , COLLECTOR CURRENT (AMP) C C Figure 3. DC Current Gain www.onsemi.com 2 h , DC CURRENT GAIN I , COLLECTOR CURRENT (AMP) FE C h , DC CURRENT GAIN FE P , POWER DISSIPATION (WATTS) D