BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. www.onsemi.com Features DARLINGTON High DC Current Gain h = 2500 (typ.) at I = 4.0 FE C 10 AMPERE CollectorEmitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON V = 80 Vdc (min) BDX33B, BDX334B CEO(sus) POWER TRANSISTORS = 100 Vdc (min) BDX33C, BDX334C 80100 VOLTS, 65 WATTS Low CollectorEmitter Saturation Voltage V = 2.5 Vdc (max) at I = 3.0 Adc CE(sat) C BDX33B, 33C/34B, 34C Monolithic Construction with BuildIn BaseEmitter Shunt Resistors These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V Vdc CEO BDX33B, BDX34B 80 1 2 BDX33C, BDX34C 100 3 CollectorBase Voltage V Vdc TO220 CB BDX33B, BDX34B 80 CASE 221A BDX33C, BDX34C 100 STYLE 1 EmitterBase Voltage V 5.0 Vdc EB Collector Current I 10 Adc MARKING DIAGRAM C Continuous 15 Peak Base Current I 0.25 Adc B Total Device Dissipation T = 25C P 70 W C D BDX3xyG Derate above 25C 0.56 W/C Operating and Storage Junction T , T 65 to +150 C AY WW J stg Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. BDX3xy = Device Code x = 3 or 4 THERMAL CHARACTERISTICS y = B or C A = Assembly Location Characteristics Symbol Max Unit Y = Year Thermal Resistance, JunctiontoCase R 1.78 C/W JC WW = Work Week G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 14 BDX33B/DBDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) 80 60 40 20 0 0 20 40 60 80 100 120 140 160 T , CASE TEMPERATURE (C) C Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 100 mAdc, I = 0) BDX33B/BDX34B 80 C B BDX33C/BDX34C 100 CollectorEmitter Sustaining Voltage (Note 1) V Vdc CER(sus) (I = 100 mAdc, I = 0, R = 100) BDX33B/BDX34B 80 C B BE BDX33C/BDX33C 100 CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEX(sus) (I = 100 mAdc, I = 0, V = 1.5 Vdc) BDX33B/BDX34B 80 C B BE BDX33C/BDX34C 100 Collector Cutoff Current I mAdc CEO (V = 1/2 rated V , I = 0) T = 25C 0.5 CE CEO B C T = 100C 10 C Collector Cutoff Current I mAdc CBO (V = rated V , I = 0) T = 25C 1.0 CB CBO E C T = 100C 5.0 C Emitter Cutoff Current I 10 mAdc EBO (V = 5.0 Vdc, I = 0) BE C ON CHARACTERISTICS DC Current Gain (Note 1) h 750 FE (I = 3.0 Adc, V = 3.0 Vdc) BDX33B, 33C/34B, 34C C CE CollectorEmitter Saturation Voltage V 2.5 Vdc CE(sat) (I = 3.0 Adc, I = 6.0 mAdc) BDX33B, 33C/34B, 34C C B BaseEmitter On Voltage V 2.5 Vdc BE(on) (I = 3.0 Adc, V = 3.0 Vdc) BDX33B, 33C/34B, 34C C CE Diode Forward Voltage V 4.0 Vdc F (I = 8.0 Adc) C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. Pulse Test non repetitive: Pulse Width = 0.25 seconds. www.onsemi.com 2 P , POWER DISSIPATION (WATTS) D