ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for generalpurpose amplifier and lowspeed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain COMPLEMENTARY SILICON h = 2500 (Typ) I = 4.0 Adc FE C POWER TRANSISTORS Collector Emitter Sustaining Voltage 100 mAdc 80100 VOLTS, 65 WATTS V = 80 Vdc (Min) BDX53B, 54B CEO(sus) V = 100 Vdc (Min) BDX53C, 54C CEO(sus) 4 Low CollectorEmitter Saturation Voltage V = 2.0 Vdc (Max) I = 3.0 Adc CE(sat) C V = 4.0 Vdc (Max) I = 5.0 Adc CE(sat) C Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 CollectorEmitter Voltage V Vdc CEO TO220 BDX53B, BDX54B 80 CASE 221A BDX53C, BDX54C 100 STYLE 1 CollectorBase Voltage V Vdc CB BDX53B, BDX54B 80 MARKING DIAGRAM BDX53C, BDX54C 100 & PIN ASSIGNMENT EmitterBase Voltage V 5.0 Vdc EB 4 Collector Current Continuous I 8.0 Adc C Collector Peak 12 Base Current I 0.2 Adc B Total Device Dissipation T = 25C P 65 W C D Derate above 25C 0.48 W/C BDX5xyG Operating and Storage Junction T , T 65 to +150 C J stg AY WW Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 1 3 assumed, damage may occur and reliability may be affected. Base Emitter 2 Collector THERMAL CHARACTERISTICS BDX5xy = Device Code x = 3 or 4 Characteristic Symbol Max Unit y = B or C Thermal Resistance, JunctiontoAmbient 70 C/W R JA A = Assembly Location Thermal Resistance, JunctiontoCase R 1.92 C/W Y = Year JC WW = Work Week G = PbFree Package ORDERING INFORMATION *For additional information on our PbFree strategy and soldering details, please See detailed ordering and shipping information in the package download the ON Semiconductor Soldering and Mounting Techniques dimensions section on page 6 of this data sheet. Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 15 BDX53B/D