BUV26 Switchmode Series NPN Silicon Power Transistor Designed for highspeed applications. Features Switch-mode Power Supplies www.onsemi.com High Frequency Converters 12 AMPERES Relay Drivers NPN SILICON Driver These Devices are PbFree and are RoHS Compliant* POWER TRANSISTORS 90 VOLTS, 85 WATTS MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit SCHEMATIC CollectorEmitter Voltage V 90 Vdc CEO(sus) COLLECTOR CollectorBase Voltage V 180 Vdc 2,4 CBO EmitterBase Voltage V 7.0 Vdc EBO Collector Current Continuous I 20 Adc 1 C BASE Collector Current Peak (pw 10 ms) I 30 Adc CM Base Current Continuous I 4.0 Adc 3 B EMITTER Base Current Peak I 6.0 Adc BM Total Power Dissipation T = 25C P 85 W C D Total Power Dissipation T = 60C P 65 W MARKING C D DIAGRAM Operating and Storage Junction T , T 65 to +175 C J stg Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the 4 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TO220 BUV26G CASE 221A AYWW STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 1 Thermal Resistance, R 1.76 C/W JC 1 2 3 JunctiontoCase BUV26 = Device Code A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping TO220 50 Units / Rail BUV26G (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 6 BUV26/DBUV26 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 200 mA, I = 0, L = 25 mH) 90 C B Collector Cutoff Current at Reverse Bias I mAdc CEX (V = 180 V, V = 1.5 V, T = 125C) 1.0 CE BE C Emitter Base Reverse Voltage V V EBO (I = 50 mA) 7.0 30 E Emitter Cutoff Current I mAdc EBO (V = 5.0 V) 1.0 EB Collector Cutoff Current I mAdc CER (V = 180 V, R = 50 , T = 125C) 3.0 CE BE C ON CHARACTERISTICS CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 6.0 A, I = 0.4 A) 0.6 C B (I = 12 A, I = 1.2 A) 1.5 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 12 A, I = 1.2 A) 2.0 C B SWITCHING CHARACTERISTICS (Resistive Load) Turn On Time I = 12 A, I = 1.2 A t 0.6 s C B on Storage Time V = 50 V, V = 6.0 V t 1.0 CC BE s Fall Time RB2 = 2.5 t 0.15 f SWITCHING CHARACTERISTICS (Inductive Load) Storage Time V = 50 V, I = 12 A T 2.0 s CC C s I = 1.2 A, V = 5.0 V B(end) B Fall Time T .15 f L = 0.5 pH, T = 125C B J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse width 300 s Duty cycle 2%. www.onsemi.com 2