CAT24AA01, CAT24AA02 2 EEPROM Serial 1/2-Kb I C Description 2 The CAT24AA01/24AA02 are EEPROM Serial 1/2 Kb I C devices internally organized as 128x8/256x8 bits. They feature a 16byte page write buffer and support the Standard 2 (100 kHz), Fast (400 kHz) and FastPlus (1 MHz) I C protocols. www.onsemi.com In contrast to the CAT24C01/24C02, the CAT24AA01/24AA02 have no external address pins, and are therefore suitable in 2 applications that require a single CAT24AA01/02 on the I C bus. Features TSOT23 2 Supports Standard, Fast and FastPlus I C Protocol TD SUFFIX CASE 419AE 1.7 V to 5.5 V Supply Voltage Range 16Byte Page Write Buffer Hardware Write Protection for Entire Memory PIN CONFIGURATIONS 2 Schmitt Triggers and Noise Suppression Filters on I C Bus Inputs TSOT23 (SCL and SDA) Low Power CMOS Technology 5 SCL WP 1 1,000,000 Program/Erase Cycles V 2 SS 100 Year Data Retention SDA 3 4 V CC Industrial Temperature Range These Devices are PbFree, Halogen Free/BFR Free and are RoHS (Top View) Compliant V CC MARKING DIAGRAM SCL RSYM CAT24AA01 SDA CAT24AA02 WP RS = Device Code Y = Production Year (Last Digit) M = Production Month (19, O, N, D) V SS Figure 1. Functional Symbol PIN FUNCTION Pin Name Function SDA Serial Data/Address SCL Clock Input WP Write Protect V Power Supply CC V Ground SS ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2018 Rev. 6 CAT24AA01/DCAT24AA01, CAT24AA02 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. REABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program/Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode 25C Table 3. D.C. OPERATING CHARACTERISTICS (V = 1.7 V to 5.5 V, T = 40C to 85C, unless otherwise specied.) CC A Symbol Parameter Test Conditions Min Max Units I Read Current Read, f = 400 kHz 0.5 mA CCR SCL I Write Current Write 1 mA CCW I Standby Current All I/O Pins at GND or V 1 A SB CC I I/O Pin Leakage Pin at GND or V 1 A L CC V Input Low Voltage 0.5 V x 0.3 V IL CC V Input High Voltage V x 0.7 V + 0.5 V IH CC CC V Output Low Voltage V 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output Low Voltage V < 2.5 V, I = 1.0 mA 0.2 V OL2 CC OL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 4. PIN IMPEDANCE CHARACTERISTICS (V = 1.7 V to 5.5 V, T = 40C to 85C, unless otherwise specied.) CC A Symbol Parameter Conditions Max Units C (Note 2) SDA I/O Pin Capacitance V = 0 V 8 pF IN IN C (Note 2) Input Capacitance (other pins) V = 0 V 6 pF IN IN I (Note 4) WP Input Current V < V 100 A WP IN IH V > V 1 IN IH 4. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull down is relatively strong therefore the external driver must be able to supply the pulldown current when attempting to drive the input HIGH. To conserve power, as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V ), the strong pulldown reverts to a weak current source. CC www.onsemi.com 2