X-On Electronics has gained recognition as a prominent supplier of CAT24AA16TDI-GT3 EEPROM across the USA, India, Europe, Australia, and various other global locations. CAT24AA16TDI-GT3 EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

CAT24AA16TDI-GT3 ON Semiconductor

CAT24AA16TDI-GT3 electronic component of ON Semiconductor
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Part No.CAT24AA16TDI-GT3
Manufacturer: ON Semiconductor
Category: EEPROM
Description: EEPROM 16K-Bit I2C Serial
Datasheet: CAT24AA16TDI-GT3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.9951 ea
Line Total: USD 4.98 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4998

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 0.9951
10 : USD 0.8272
100 : USD 0.7592
500 : USD 0.706
3000 : USD 0.6245
9000 : USD 0.5851

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.5783

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1282
Multiples : 1282
1282 : USD 0.281

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.424
10 : USD 0.776
25 : USD 0.5458
100 : USD 0.4629
250 : USD 0.4578
500 : USD 0.4505
1000 : USD 0.438
3000 : USD 0.4277

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3875
6000 : USD 0.3645

   
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We are delighted to provide the CAT24AA16TDI-GT3 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CAT24AA16TDI-GT3 and other electronic components in the EEPROM category and beyond.

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DATA SHEET www.onsemi.com 2 EEPROM Serial 16-Kb I C CAT24AA16 TSOT23 Description TB SUFFIX 2 The CAT24AA16 is a EEPROM Serial 16Kb I C device internally CASE 419AE organized as 2048x8 bits. The device features a 16byte page write buffer and supports 2 PIN CONFIGURATIONS 100 kHz, 400 kHz and 1 MHz I C protocols. Data is written by providing a starting address, then loading 1 to 16 TSOT23 contiguous bytes into a Page Write Buffer, and then writing all data to nonvolatile memory in one internal write cycle. Data is read by 5 SCL WP 1 providing a starting address and then shifting out data serially while V 2 automatically incrementing the internal address count. SS SDA 3 4 V CC Features 2 Standard and Fast I C Protocol Compatible (Top View) Supports 1 MHz Clock Frequency 1.7 V to 5.5 V Supply Voltage Range PIN FUNCTION 16Byte Page Write Buffer Pin Name Function Hardware Write Protection for Entire Memory SDA Serial Data Input/Output 2 Schmitt Triggers and Noise Suppression Filters on I C Bus Inputs SCL Clock Input (SCL and SDA) WP Write Protect Low Power CMOS Technology 1,000,000 Program/Erase Cycles V Power Supply CC 100 Year Data Retention V Ground SS Industrial Temperature Range NC No Connect This Device is PbFree, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION V CC See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. SCL CAT24AA16 SDA WP V SS Figure 1. Functional Symbol Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: September, 2021 Rev. 3 CAT24AA16/DCAT24AA16 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. REABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program/Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode 25C Table 3. DC OPERATING CHARACTERISTICS (V = 1.7 V to 5.5 V, T = 40C to 85C, unless otherwise specied.) CC A Symbol Parameter Test Conditions Min Max Units I Read Current Read, f = 400 kHz 0.5 mA CCR SCL I Write Current Write, f = 400 kHz 1 mA CCW SCL I Standby Current All I/O Pins at GND or V 1 A SB CC I I/O Pin Leakage Pin at GND or V 1 A L CC V Input Low Voltage 0.5 V x 0.3 V IL CC V Input High Voltage V x 0.7 V + 0.5 V IH CC CC V Output Low Voltage V 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output Low Voltage V < 2.5 V, I = 1.0 mA 0.2 V OL2 CC OL Table 4. PIN IMPEDANCE CHARACTERISTICS (V = 1.7 V to 5.5 V, T = 40C to 85C, unless otherwise specied.) CC A Symbol Parameter Conditions Max Units C (Note 4) SDA I/O Pin Capacitance V = 0 V 8 pF IN IN C (Note 4) Input Capacitance (Other Pins) V = 0 V 6 pF IN IN I (Note 5) WP Input Current A V < 0.5 x V , V = 5.5 V 200 WP IN CC CC V < 0.5 x V , V = 3.3 V 150 IN CC CC V < 0.5 x V , V = 1.8 V 100 IN CC CC V > 0.5 x V 1 IN CC 4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 5. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull down is relatively strong therefore the external driver must be able to supply the pulldown current when attempting to drive the input HIGH. To conserve power, as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V ), the strong pulldown reverts to a weak current source. CC www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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