ESD Protection Diode UltraLow Capacitance MicroPackaged Diodes for ESD Protection ESD7241, SZESD7241 The ESD7241 is designed to protect voltage sensitive components that require ultralow capacitance from ESD and transient voltage www.onsemi.com events. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. Features MARKING Industry Leading Capacitance Linearity Over Voltage DIAGRAM UltraLow Capacitance: < 1.0 pF Max Insertion Loss: 0.15 dB at 1 GHz 0.60 dB at 3 GHz X2DFN2 2 M CASE 714AB Low Leakage: < 0.5 A Protection for the following IEC Standards: 2 = Specific Device Code IEC6100042 (ESD): Level 4 28 kV Contact M = Date Code IEC6100044 (EFT): 40 A 5/50 ns IEC6100045 (Lightning): 2.5 A (8/20 s) SZESD7241MXWT5G Wettable Flank Package for Optimal X2DFNW2 A M Automated Optical Inspection (AOI) CASE 711BG SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and A = Specific Device Code M = Date Code PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION Typical Applications Device Package Shipping RF Signal ESD Protection Near Field Communications ESD7241N2T5G X2DFN2 8000 / Tape & (PbFree) Reel USB 3.x Vbus Protection SZESD7241N2T5G X2DFN2 8000 / Tape & MAXIMUM RATINGS (T = 25C unless otherwise noted) (PbFree) Reel A Rating Symbol Value Unit SZESD7241MXWT5G X2DFNW2 8000 / Tape & (PbFree) Reel IEC 6100042 (ESD) (Note 1) 28 kV For information on tape and reel specifications, Total Power Dissipation (Note 2) T = 25C P 300 mW A D including part orientation and tape sizes, please Thermal Resistance, JunctiontoAmbient R 400 C/W JA refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Junction and Storage Temperature Range T , T 55 to C J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse at T = 25C, per IEC6100042 waveform. A 2. Mounted with recommended minimum pad size, DC board FR4 Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2020 Rev. 3 ESD7241/DESD7241, SZESD7241 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage V 24 V RWM Breakdown Voltage V I = 1 mA (Note 3) 24.3 25 28 V BR T Reverse Leakage Current I V = 24 V 0.5 A R RWM Clamping Voltage TLP V I = 8 A (Note 4) 38 V C PP Clamping Voltage TLP V I = 16 A (Note 4) 48 V C PP Junction Capacitance C V = 0 V, f = 1 MHz 1.0 pF J R V = 0 V, f = 1 GHz 0.7 R Dynamic Resistance R TLP Pulse 0.84 DYN Insertion Loss f = 1 GHz 0.15 dB f = 3 GHz 0.58 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 4. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 TYPICAL CHARACTERISTICS 140 20 120 0 100 20 80 40 60 60 40 80 20 100 120 0 20 140 25 0 25 50 75 100 125 150 25 0 25 50 75 100 125 150 TIME (ns) TIME (ns) Figure 1. Typical IEC6100042 + 8 kV Contact Figure 2. Typical IEC6100042 8 kV Contact ESD Clamping Voltage ESD Clamping Voltage www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)