ESD Protection Diode UltraLow Capacitance ESD9M5.0ST5G The ESD9M Series is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs that www.onsemi.com utilize highspeed lines such as USB. Specification Features: Low Capacitance 2.5 pF Low Clamping Voltage Small Body Outline Dimensions: 0.039 x 0.024 (1.00 mm x 0.60 mm) Low Body Height: 0.016 (0.4 mm) Standoff Voltage: 5 V Low Leakage SOD923 CASE 514AB Response Time is Typically < 1.0 ns IEC6100042 Level 4 ESD Protection AECQ101 Qualified and PPAP Capable for SZ Prefix This is a PbFree Device MARKING DIAGRAM Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic 4 M Epoxy Meets UL 94 V0 LEAD FINISH: 100% Matte Sn (Tin) 4 = Specific Device Code MOUNTING POSITION: Any M = Date Code QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements MAXIMUM RATINGS ORDERING INFORMATION Rating Symbol Value Unit Device Package Shipping IEC 6100042 (ESD) Contact 10 kV ESD9M5.0ST5G SOD923 8000 / Tape & Air 15 (PbFree) Reel Total Power Dissipation on FR5 Board P 150 mW D SZESD9M5.0ST5G SOD923 8000 / Tape & (Note 1) T = 25C A (PbFree) Reel Junction and Storage Temperature Range T , T 55 to C J stg For information on tape and reel specifications, +150 including part orientation and tape sizes, please Lead Solder Temperature Maximum T 260 C refer to our Tape and Reel Packaging Specifications L (10 Second Duration) Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be DEVICE MARKING INFORMATION assumed, damage may occur and reliability may be affected. See specific marking information in the device marking 1. FR5 = 1.0 x 0.75 x 0.62 in. column of the Electrical Characteristics tables starting on page 2 of this data sheet. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: September, 2020 Rev. 8 ESD9M5.0S/DESD9M5.0ST5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional C Max. Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.0 V Max. I = 10 mA for all types) A F F V (V) C V V (V) I I ( A) I = 1 A RWM R BR T PP (V) V (Note 2) I C (pF) (Note 4) V RWM T C Per IEC6100042 Device (Note 3) Marking Max Max Min mA Max Max Device ESD9M5.0ST5G, 4* 5.0 1.0 5.8 1.0 2.5 9.8 Figures1and 2 SZESD9M5.0ST5G See Below * Rotated 270. * *The G suffix indicates PbFree package available. ***Other voltages available upon request. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 4. Surge current waveform per Figure 5. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2