ESDM1131 3.3 V ESD Protection Diodes Micropackaged Diodes for ESD Protection www.onsemi.com The ESD1131 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are MARKING exposed to ESD. Because of its small size, it is suited for use in DIAGRAM smartphone, smart-watch, or many other portable / wearable applications where board space comes at a premium. X4DFN2 A CASE 718AA Features A = Specific Device Code Low Capacitance (4 pF, I/O to GND) Small Body Outline Dimensions 01005 Size: 0.445 x 0.240 mm PIN CONFIGURATION Protection for the Following IEC Standards: AND SCHEMATIC IEC 6100042 (Level 4) Low ESD Clamping Voltage 12 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J = Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L ORDERING INFORMATION Maximum (10 Seconds) See detailed ordering and shipping information on page 2 of this data sheet. IEC 6100042 Contact (ESD) ESD 16 kV IEC 6100042 Air (ESD) ESD 16 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2018 Rev. 1 ESDM1131/DESDM1131 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 3.3 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 4.0 5.0 6.0 V BR T Reverse Leakage Current I V = 3.3 V, I/O Pin to GND 0.1 A R RWM Clamping Voltage V I = 4 A, (8x20 s pulse) 5.6 V C PP Clamping Voltage V 5.5 V I = 8 A IEC 6100042 Level 2 equivalent C PP TLP (Note 1) (4 kV Contact, 4 kV Air) I = 16 A 7.0 PP IEC 6100042 Level 2 equivalent (8 kV Contact, 15 kV Air) Junction Capacitance C V = 0 V, f = 1 MHz 4.0 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 ORDERING INFORMATION Device Package Shipping ESDM1131MX4T5G X4DFN2 10,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2