X-On Electronics has gained recognition as a prominent supplier of ESDR0502NMUTAG ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ESDR0502NMUTAG ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

ESDR0502NMUTAG ON Semiconductor

ESDR0502NMUTAG electronic component of ON Semiconductor
ESDR0502NMUTAG ON Semiconductor
ESDR0502NMUTAG ESD Suppressors / TVS Diodes
ESDR0502NMUTAG  Circuit Protection

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See Product Specifications
Part No. ESDR0502NMUTAG
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes LOW CAP TVS ARRAY
Datasheet: ESDR0502NMUTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0684 ea
Line Total: USD 205.2 
Availability - 2910
Ship by Thu. 01 May to Wed. 07 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
4
Ship by Thu. 08 May to Tue. 13 May
MOQ : 5
Multiples : 5
5 : USD 0.1622
50 : USD 0.159
150 : USD 0.1176
500 : USD 0.1045

2910
Ship by Thu. 01 May to Wed. 07 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.0684
9000 : USD 0.065

2619
Ship by Thu. 01 May to Wed. 07 May
MOQ : 569
Multiples : 1
569 : USD 0.143

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ESDR0502NMUTAG from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ESDR0502NMUTAG and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESDR0502N ESD Protection Diode Array Ultra Low Capacitance ESD Protection for High Speed Data Line Protection The ESDR0502N ultra low capacitance surge protection array is designed to protect high speed data lines from ESD. Ultralow www.onsemi.com capacitance and high level of ESD protection makes this device well suited for use in USB 2.0 applications. 6 Features 14 5 Low Capacitance (0.3 pF Typical Between I/O Lines and Ground) IEC 6100042 Level 4 UL Flammability Rating of 94 V0 These Devices are PbFree and are RoHS Compliant Typical Applications High Speed Communication Line Protection USB 2.0 High Speed Data Line and Power Line Protection Monitors and Flat Panel Displays UDFN6 MP3 MU SUFFIX CASE 517AA Gigabit Ethernet MAXIMUM RATINGS (T = 25C unless otherwise noted) J MARKING DIAGRAM Rating Symbol Value Unit D M Operating Junction Temperature Range T 40 to +125 C J Peak Power Dissipation P 100 W pk 8x20 s T = 25C (Note 1) D = Specific Device Code* A (Rotated 90 clockwise) Peak Power Current I 3.0 A pp M = Date Code & Assembly Location 8x20 s T = 25C (Note 1) A Storage Temperature Range T 55 to +150 C stg PINOUT Lead Solder Temperature T 260 C L Maximum (10 Seconds) 1 6 GND VBUS IEC 6100042 Contact (ESD) ESD 8.0 kV Stresses exceeding those listed in the Maximum Ratings table may damage the 2 5 NC D+ device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3 NC 4 D 1. Nonrepetitive current pulse (pin 6 to pin 1). (Top View) ORDERING INFORMATION Device Package Shipping ESDR0502NMUTAG UDFN6 3000 / (PbFree) Tape & Reel ESDR0502NMUTBG UDFN6 3000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2017 Rev. 6 ESDR0502N/DESDR0502N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T =25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 5.5 V RWM Breakdown Voltage V I = 1 mA, (Note 3) 6.0 V BR T Reverse Leakage Current I V = 5.5 V 1.0 A R RWM ESD Clamping Voltage V Per IEC6100042 (Note 4) See Figures 1 & 2 C Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.3 0.6 pF J R Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins 0.3 0.6 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 80 10 70 0 60 10 50 20 40 30 30 40 20 50 10 60 0 70 10 80 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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