ESDR0502NMUTAG ON Semiconductor

ESDR0502N ESD Protection Diode Array Ultra Low Capacitance ESD Protection for High Speed Data Line Protection The ESDR0502N ultra low capacitance surge protection array is designed to protect high speed data lines from ESD. Ultralow www.onsemi.com capacitance and high level of ESD protection makes this device well suited for use in USB 2.0 applications. 6 Features 14 5 Low Capacitance (0.3 pF Typical Between I/O Lines and Ground) IEC 6100042 Level 4 UL Flammability Rating of 94 V0 These Devices are PbFree and are RoHS Compliant Typical Applications High Speed Communication Line Protection USB 2.0 High Speed Data Line and Power Line Protection Monitors and Flat Panel Displays UDFN6 MP3 MU SUFFIX CASE 517AA Gigabit Ethernet MAXIMUM RATINGS (T = 25C unless otherwise noted) J MARKING DIAGRAM Rating Symbol Value Unit D M Operating Junction Temperature Range T 40 to +125 C J Peak Power Dissipation P 100 W pk 8x20 s T = 25C (Note 1) D = Specific Device Code* A (Rotated 90 clockwise) Peak Power Current I 3.0 A pp M = Date Code & Assembly Location 8x20 s T = 25C (Note 1) A Storage Temperature Range T 55 to +150 C stg PINOUT Lead Solder Temperature T 260 C L Maximum (10 Seconds) 1 6 GND VBUS IEC 6100042 Contact (ESD) ESD 8.0 kV Stresses exceeding those listed in the Maximum Ratings table may damage the 2 5 NC D+ device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3 NC 4 D 1. Nonrepetitive current pulse (pin 6 to pin 1). (Top View) ORDERING INFORMATION Device Package Shipping ESDR0502NMUTAG UDFN6 3000 / (PbFree) Tape & Reel ESDR0502NMUTBG UDFN6 3000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2017 Rev. 6 ESDR0502N/DESDR0502N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T =25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 5.5 V RWM Breakdown Voltage V I = 1 mA, (Note 3) 6.0 V BR T Reverse Leakage Current I V = 5.5 V 1.0 A R RWM ESD Clamping Voltage V Per IEC6100042 (Note 4) See Figures 1 & 2 C Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.3 0.6 pF J R Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins 0.3 0.6 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 80 10 70 0 60 10 50 20 40 30 30 40 20 50 10 60 0 70 10 80 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)