ESDM3031 ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESDM3031 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast www.onsemi.com response time, make these parts ideal for ESD protection on designs where board space is at a premium. Features 1 2 Low Clamping Voltage Small Body Outline Dimensions: 0.62 mm x 0.32 mm Low Body Height: 0.3 mm MARKING Standoff Voltage: 3.3 V DIAGRAM IEC6100042 Level 4 ESD Protection PIN 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS X3DFN2 M CASE 152AF Compliant Typical Applications 5 = Specific Device Code SD Card Protection M = Date Code Audio Line GPIO ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping Rating Symbol Value Unit ESDM3031MXT5G X3DFN2 10000 / Tape & IEC 6100042 (ESD) Contact 30 kV (PbFree) Reel Air 30 For information on tape and reel specifications, Total Power Dissipation on FR5 Board P 250 mW including part orientation and tape sizes, please D (Note 1) T = 25C refer to our Tape and Reel Packaging Specifications A Thermal Resistance, JunctiontoAmbient R 400 C/W Brochure, BRD8011/D. JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: October, 2017 Rev. 2 ESDM3031/D 5ESDM3031 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 3.3 V RWM Breakdown Voltage (Note 2) V I = 1 mA 4.4 6.2 V BR T Reverse Leakage Current I V = 3.3 V 0.1 A R RWM Clamping Voltage (Note 3) V I = 5 A 6.3 V C PP Clamping Voltage (Note 3) V I = 10 A 8.0 V C PP Peak Pulse Current (Note 3) I t = 8/20 s 11 A PP P Clamping Voltage V I = 16 A 7.2 V PP C IEC 6100042 Level 4 equivalent TLP (Note 4) (8 kV Contact, 15 kV Air) Junction Capacitance C V = 0 V, f = 1 MHz 20 pF J R Dynamic Resistance R TLP Pulse 0.13 DYN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 4. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 40 5 35 0 30 5 25 10 20 15 15 20 10 25 5 30 0 35 5 40 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)