ESDM3051 5V ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESDM3051 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast www.onsemi.com response time, make these parts ideal for ESD protection on designs where board space is at a premium. Features 2 1 Low Clamping Voltage Small Body Outline Dimensions: 0.62 mm x 0.32 mm Low Body Height: 0.3 mm MARKING Standoff Voltage: 5 V DIAGRAM IEC6100042 Level 4 ESD Protection PIN 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS X3DFN2 D M CASE 152AF Compliant Typical Applications D = Specific Device Code USB ID Line Protection M = Date Code SD Card Protection Audio Line Protection X2DFN2 JP M GPIO CASE 714AB MAXIMUM RATINGS JP = Specific Device Code Rating Symbol Value Unit M = Date Code IEC 6100042 (ESD) Contact 30 kV Air 30 Total Power Dissipation on FR5 Board P 250 mW D (Note 1) T = 25C ORDERING INFORMATION A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Device Package Shipping Junction and Storage Temperature Range T , T 55 to +150 C J stg ESDM3051MXT5G X3DFN2 10000 / Tape & Lead Solder Temperature Maximum T 260 C L (PbFree) Reel (10 Second Duration) ESDM3051N2T5G X2DFN2 8000 / Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, 1. FR5 = 1.0 x 0.75 x 0.62 in. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2018 Rev. 3 ESDM3051/DESDM3051 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 5.0 V RWM Breakdown Voltage (Note 2) V I = 1 mA 5.1 7.0 V BR T Reverse Leakage Current I V = 5 V 0.1 A R RWM Clamping Voltage (Note 3) V I = 1 A 6.0 V C PP Clamping Voltage (Note 3) V I = 8 A 8.2 V C PP Peak Pulse Current (Note 3) I t = 8/20 s 9.9 A PP P Clamping Voltage V I = 16 A 7.5 V PP C IEC 6100042 Level 4 equivalent TLP (Note 4) (8 kV Contact, 15 kV Air) Junction Capacitance C V = 0 V, f = 1 MHz 21 pF J R Dynamic Resistance R TLP Pulse 0.11 DYN Insertion Loss f = 10 MHz 0.01 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 4. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 TYPICAL CHARACTERISTICS 40 5 35 0 30 5 25 10 20 15 15 20 10 25 5 30 0 35 5 40 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)