ESDL3552B Ultra-Low Capacitance ESD Protection Diodes MicroPackaged Diodes for ESD Protection The ESDL3552B is designed to protect voltage sensitive components that require ultra-low capacitance from ESD and transient www.onsemi.com voltage events. Excellent clamping capability, low capacitance, high breakdown voltage, high linearity, low leakage, and fast response time make these parts ideal for ESD protection on designs where board MARKING space is at a premium. It has industry leading capacitance linearity DIAGRAM over voltage making it ideal for highspeed data line protection PIN 1 applications. X4DFN3 CASE 718AB Features Industry Leading Capacitance Linearity Over Voltage A = Specific Device Code UltraLow Capacitance: 0.25 pF Insertion Loss: 0.26 dB 5 GHz I/O I/O 0201 Isolated DSN Package: 0.62 mm x 0.32 mm Pin 3 Pin 1 Standoff Voltage: 5.0 V Low Leakage: < 50 nA Low Dynamic Resistance: < 1.0 These Devices are PbFree, HalogenFree/BFRFree and are RoHS Compliant Typical Applications High Speed Data Line Protection USB 2.0, USB 3.0, USB 3.1 GND Pin 2 MAXIMUM RATINGS (T = 25C unless otherwise noted) A Rating Symbol Value Unit ORDERING INFORMATION IEC 6100042 Level 4 (Contact) (Note 1) ESD 20 kV Device Package Shipping IEC 6100042 Level 4 (Air) (Note 1) 20 Maximum Peak Pulse Current I 2.0 A ESDL3552BPFCT5G X4DFN3 15000 / Tape & PP IEC 6100045 8/20 s (Lightning) (Note 2) (PbFree) Reel For information on tape and reel specifications, Total Power Dissipation (Note 3) T = 25C P 300 mW A D including part orientation and tape sizes, please Thermal Resistance, JunctiontoAmbient R 400 C/W JA refer to our Tape and Reel Packaging Specifications Junction and Storage Temperature Range T , T 55 to C Brochure, BRD8011/D. J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse at T = 25C, per IEC6100042 waveform. A 2. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 3. Mounted with recommended minimum pad size, DC board FR4 Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: August, 2019 Rev. 0 ESDL3552B/D AESDL3552B ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T V Clamping Voltage I I V V V C PP R C BR RWM V I V V V R V Working Peak Reverse Voltage RWM BR C RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T *See Application Note AND8308/D for detailed explanations of BiDirectional Surge Protection datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage V Between any two pins (40C to +85C) 5.0 V RWM Breakdown Voltage V I = 10 mA, Between any two pins (40C to +85C) 6.5 10.2 11.5 V BR T I = 1 mA, Between any two pins 7.0 9.3 11 T Reverse Leakage Current I V = 5.0 V, T = 25C 0.001 0.05 A R RWM A V = 5.0 V, T = 85C 0.001 0.25 A RWM A Clamping Voltage TLP V 14.5 V C I = 4 A IEC 6100042 Level 1 equivalent PP (2 kV Contact, 4 kV Air) Pin 1 to Pin 2, Pin 3 to Pin 2 I = 16 A IEC 6100042 Level 4 equivalent 21.5 V PP (8 kV Contact, 16 kV Air) Pin 1 to Pin 2, Pin 3 to Pin 2 Reverse Peak Pulse Current I IEC6100045 (8x20 s), Between any two pins 2.0 3.0 A PP Clamping Voltage (8x20 s) V I = 2 A 14 18 V C PP Dynamic Resistance R 100 ns TLP, Pin 1 to Pin 2, Pin 3 to Pin 2 0.58 DYN Junction Capacitance C V = 0 V, f = 1 MHz, Between any two pins 0.25 0.30 pF J R Capacitance Linearity C V = 0 V to 5 V, f = 1 MHz 0.03 pF R Insertion Loss I f = 2.5 GHz 0.16 dB L f = 5.0 GHz 0.26 f = 10.0 GHz 0.41 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 110 10 100 0 90 10 20 80 70 30 60 40 50 50 40 60 30 70 20 80 10 90 100 0 10 110 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)